High thermal conductance thermal interface materials based on nanostructured metallic network-polymer composites
A composite structure provides high thermal conductivity as a thermal interface structure with a relatively low filler loading. The composite structure is formed by dispersing nanoparticles in a matrix at a low filler loading, and controlled sintering of the composite structure to induce agglomeration of the nanoparticles into a connected percolating thermally conducting network structure within the matrix.
1. A composite structure comprising a matrix and a connected percolating thermally conducting network structure embedded within said matrix, said connected percolating network comprising interconnected nanoparticles that are in contact among one another throughout an entirety of the composite structure.
2. The composite structure of claim 1 , wherein said nanoparticles have a dimension in a range from 5 nm to 500 nm.
3. The composite structure of claim 1 , wherein said nanoparticles comprise doped semiconductor nanoparticles, metal carbide nanoparticles, oxide nanoparticles or nitride nanoparticles.
4. The composite structure of claim 1 , wherein said matrix comprises a polymer material.
5. The composite structure of claim 4 , wherein said polymer material is selected from an epoxy, modified epoxy, silicone, and rubber.
6. The composite structure of claim 1 , further comprising phase change material particles dispersed within said matrix.
7. The composite structure of claim 6 , wherein said phase change material particles comprise at least one of phase change salts, lamellar metallo-alkylphosphonates, indium nanoparticles, and low melt element or alloy.
8. The composite structure of claim 1 , wherein said matrix comprises a phase change material.
9. The composite structure of claim 8 , wherein said phase change material comprises at least one of an organic phase change material, an inorganic phase change material, and a eutectic of at least two phase change materials.
10. The composite structure of claim 1 , wherein said connected percolating thermally conducting network structure is a metallic nanoparticle network having a volume fraction from 0.1% to 50% within said composite structure.
11. The composite structure of claim 10 , wherein a volume fraction of said metallic nanoparticle network within said composite structure is from 0.1% and 20%, and said composite structure has a thermal conductivity greater than 1.0 W/mK.
12. The composite structure of claim 10 , wherein said metallic nanoparticle network comprises silver nanoparticles, copper nanoparticles or aluminum nanoparticles.
13. A semiconductor structure comprising:
a first substrate;
a second substrate; and
a composite structure located between said first substrate and said second substrate, wherein said composite structure comprises a matrix and a connected percolating thermally conducting network structure embedded within said matrix, said connected percolating network comprising interconnected nanoparticles that are in contact among one another throughout an entirety of said composite structure so as to provide interconnected thermally conducting pathways from said first substrate to said second substrate.
14. The semiconductor structure of claim 13 , wherein each of said first substrate and said second substrate comprises a semiconductor chip, a packaging substrate, a printed circuit board (PCB), or a transposer structure.
15. The semiconductor structure of claim 13 , wherein said nanoparticles comprise metallic nanoparticles selected from silver nanoparticles, copper nanoparticles and aluminum nanoparticles.
16. The semiconductor structure of claim 13 , wherein said nanoparticles comprise non-metallic nanoparticles selected from doped semiconductor nanoparticles, metal carbide nanoparticles, oxide nanoparticles and nitride nanoparticles.
17. The semiconductor structure of claim 13 , wherein said matrix further comprises a phase change material.
18. The semiconductor structure of claim 13 , wherein said matrix comprises a polymer material.
19. The semiconductor structure of claim 18 , wherein said polymer material is selected from an epoxy, modified epoxy, silicone, and rubber.