Wafer-level light emitting diode package and method of fabricating the same

1. A light-emitting diode (LED), comprising:

a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types;

a first contact layer disposed on the first type semiconductor layer;

a second contact layer disposed on the second type semiconductor layer;

a first insulation layer covering the second contact layer, sidewalls of the active layer, and the second semiconductor layer, and contacting the first contact layer, the first insulation layer comprising a first opening exposing the first semiconductor layer and a second opening exposing the second contact layer;

a second insulation layer is disposed on the first insulation layer;

a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer;

a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer; and

a third insulation layer disposed on side surfaces of the first bump and the second bump.

2. The LED of claim 1 , wherein the second insulation layer is disposed directly on the first contact layer.

3. The LED of claim 1 , further comprising a wavelength conversion layer disposed directly on the semiconductor stack.

4. The LED of claim 3 , wherein the wavelength converter is disposed on a second side of semiconductor stack opposite to the first side.

5. The LED of claim 4 , wherein the wavelength converter comprises a phosphor sheet or an impurity-doped material.

6. The LED of claim 4 , wherein the wavelength converter comprises a side surface that is substantially coplanar with side surfaces of the first and second insulation layers.

7. The LED of claim 6 , wherein the side surfaces of the first and second insulation layers are substantially coplanar with a side surface of the third insulation layer.

8. The LED of claim 1 , wherein at least one of the first insulation layer and the second insulation layer comprises a distributed Bragg reflector.

9. The LED of claim 1 , wherein the first insulation layer separates the first contact layer from second contact layer.

10. The LED of claim 1 , wherein the third insulation layer comprises a polymer.

11. The LED of claim 1 , further comprising a dummy bump disposed between the first bump and the second bump.

12. The LED of claim 1 , wherein:

the first bump and the second bump are terminals comprising substantially coplanar distal ends; and

the first bump and the second bump are electrically connected to a circuit board.

13. The LED of claim 12 , wherein the circuit board comprises a metal core printed circuit board (MC-PCB).

14. The LED of claim 1 , wherein the first bump and the second bump protrude from the third insulation layer.

15. The LED of claim 1 , wherein the first bump is formed by plating.

16. The LED of claim 1 , further comprising:

a first electrode pad disposed between the second insulation layer and the first bump; and

a second electrode pad disposed between the second insulation layer and the second bump.

17. The LED of claim 16 , wherein:

the first electrode pad extends through the second insulation layer to contact the first contact layer; and

the second electrode pad extends through the second insulation layer to contact the second contact layer.

18. The LED of claim 1 , wherein the first semiconductor layer comprises a roughened surface.

19. The LED of claim 1 , further comprising a contact hole formed through the second semiconductor layer and the active layer to expose the first opening,

wherein the first contact layer is electrically insulated from the second semiconductor layer and the active layer in the contact hole.

20. The LED of claim 19 , wherein the first contact layer contacts the first type semiconductor layer through the first opening.