60 GHz integrated circuit to printed circuit board transitions
Embodiments are directed to a transition structure for interfacing an integrated circuit chip and a substrate, comprising: a co-planar waveguide (CPW) structure formed based on ground-signal-ground (GSG) pads on the integrated circuit chip, a grounded co-planar waveguide (CPWG) structure coupled to the GSG pads, and a microstrip coupled to the CPWG structure.
1. A transition structure for interfacing an integrated circuit chip and a substrate, comprising:
a vertical transmission section configured to bridge two layers of a package between two ground planes;
a transmission line formed between the ground planes and connected to a center of the vertical transmission section;
a second vertical transmission section coupled to the transmission line and a layer of the package;
a plurality of solder connections coupled to the layer of the package; and
a microstrip coupled to at least one of the solder connections.
2. The transition structure of claim 1 , wherein the microstrip is coupled to the at least one of the solder connections through a grounded co-planar waveguide structure.
3. The transition structure of claim 1 , wherein the transmission line comprises a stripline.
4. The transition structure of claim 1 , wherein at least one of the vertical transmission section and the second vertical transmission section comprises a quasi-coax section.
5. The transition structure of claim 1 , wherein the substrate comprises a printed circuit board.
6. The transition structure of claim 1 , wherein the transmission line is configured to convey a signal associated with the integrated circuit.
7. The transition structure of claim 6 , wherein the signal is a millimeter wave signal.
8. The transition structure of claim 6 , wherein the at least one solder connection is associated with the signal, and wherein the remainder of the solder connections are associated with a ground.
9. The transition structure of claim 1 , further comprising:
a via configured to provide a direct current path to ground.
10. The transition structure of claim 1 , wherein the chip comprises ground-signal-ground pads that create a co-planar waveguide structure that is continued in a second layer of the package.
11. The transition structure of claim 10 , further comprising vias between the second layer and a third layer of the package.
12. The transition structure of claim 1 , wherein the microstrip is tapered.
13. The transition structure of claim 1 , wherein the package is a low temperature co-fired ceramic package.