Integrated optical receiver architecture for high speed optical I/O applications
An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.
1. An integrated optical receiver system, comprising:
a silicon substrate;
a mirror structure disposed on the silicon substrate;
a silicon waveguide disposed on the silicon substrate and optically coupled to the minor structure, the silicon waveguide having a wide input end that tapers to a narrower end, the input end to receive light from an optical fiber;
a grating structure optically coupled to the silicon waveguide and proximate to the minor structure, wherein the grating structure includes an etched grating de-multiplexer formed in the silicon waveguide to facilitate de-multiplexing of single-mode beams and multi-mode beams, wherein the grating structure further includes etched trenches having a buried oxide layer filled with oxide comprising a total internal reflection (TIR) minor of the mirror structure; and
a photodetector proximate to a portion of the narrower end of the silicon waveguide wherein light entering the silicon waveguide from the optical fiber is capable of being propagated in a first direction along a length of the silicon waveguide and in a second direction different from the first direction to the photodetector and the change in direction of propagation occurs proximate to the minor structure.
2. The system of claim 1 , wherein the photodetector comprises a germanium photodetector, wherein the grating structure further comprises a planarized wafer being wafer-bonded with a silicon wafer such that upon flipping, the silicon water switches to an opposite end and wherein an original handle wafer of the silicon substrate is removed.
3. The system of claim 1 , wherein the substrate comprises a silicon-on-insulator substrate.
4. The system of claim 1 , wherein the buried oxide layer is placed between the silicon substrate and the silicon waveguide.
5. The system of claim 1 , wherein the etched grating de-multiplexer is formed in an etched region of the silicon waveguide in front of a V-groove wedge.
6. An integrated optical receiver system, comprising:
a silicon substrate;
a mirror structure disposed on the silicon substrate;
a silicon waveguide disposed on the silicon substrate and optically coupled to the minor structure, the silicon waveguide having an wide input end that tapers to a narrower end, the input end to receive light from an optical fiber;
an optical fiber optically coupled to the input end of the silicon waveguide;
a grating structure optically coupled to the silicon waveguide and proximate to the minor structure, wherein the grating structure includes an etched grating de-multiplexer formed in the silicon waveguide to facilitate de-multiplexing of single-mode beams and multi-mode beams, wherein the grating structure further includes etched trenches having a buried oxide layer filled with oxide comprising a total internal reflection (TIR) minor of the mirror structure; and
a photodetector proximate to a portion of a narrower end of the silicon waveguide, wherein light entering the silicon waveguide from the optical fiber is capable of being propagated in a first direction along a length of the silicon waveguide and in a second direction different from the first direction to the photodetector and the change in direction of propagation occurs proximate to the minor structure.
7. The system of claim 6 , wherein the optical fiber is a multi-mode optical fiber.
8. The system of claim 6 , wherein the photodetector is a germanium photodetector, wherein the grating structure further comprises a planarized wafer being wafer-bonded with a silicon wafer such that upon flipping, the silicon water switches to an opposite end and wherein an original handle wafer of the silicon substrate is removed.
9. The system of claim 6 , wherein the substrate is a silicon-on-insulator substrate.
10. The system of claim 6 , wherein the buried oxide layer is placed between the silicon substrate and the silicon waveguide.
11. The system of claim 6 , wherein the etched grating de-multiplexer is formed in an etched region of the silicon waveguide in front of a V-groove wedge.
12. An apparatus comprising:
a silicon substrate;
a mirror structure disposed on the silicon substrate;
a silicon waveguide disposed on the silicon substrate and optically coupled to the minor structure, the silicon waveguide having a wide input end that tapers to a narrower end, the input end to receive light from an optical fiber;
a grating structure optically coupled to the silicon waveguide and proximate to the minor structure, wherein the grating structure includes an etched grating de-multiplexer formed in the silicon waveguide to facilitate de-multiplexing of single-mode beams and multi-mode beams, wherein the grating structure further includes etched trenches having a buried oxide layer filled with oxide comprising a total internal reflection (TIR) minor of the mirror structure; and
a photodetector proximate to a portion of the narrower end of the silicon waveguide wherein light entering the silicon waveguide from the optical fiber is capable of being propagated in a first direction along a length of the silicon waveguide and in a second direction different from the first direction to the photodetector and the change in direction of propagation occurs proximate to the minor structure.
13. The apparatus of claim 12 , wherein the photodetector comprises a germanium photodetector, wherein the substrate comprises a silicon-on-insulator substrate, wherein the grating structure further comprises a planarized wafer being wafer-bonded with a silicon wafer such that upon flipping, the silicon water switches to an opposite end and wherein an original handle wafer of the silicon substrate is removed.
14. The apparatus of claim 12 , wherein the buried oxide layer is placed between the silicon substrate and the silicon waveguide, wherein the etched grating de-multiplexer is formed in an etched region of the silicon waveguide in front of a V-groove wedge.
15. The apparatus of claim 12 , wherein the optical fiber comprises a multi-mode optical fiber, wherein a lens is placed between the multi-mode fiber and the silicon waveguide input end.
16. An apparatus comprising:
a silicon substrate;
a mirror structure disposed on the silicon substrate;
a silicon waveguide disposed on the silicon substrate and optically coupled to the minor structure, the silicon waveguide having an wide input end that tapers to a narrower end, the input end to receive light from an optical fiber;
an optical fiber optically coupled to the input end of the silicon waveguide;
a grating structure optically coupled to the silicon waveguide and proximate to the minor structure, wherein the grating structure includes an etched grating de-multiplexer formed in the silicon waveguide to facilitate de-multiplexing of single-mode beams and multi-mode beams, wherein the grating structure further includes etched trenches having a buried oxide layer filled with oxide comprising a total internal reflection (TIR) minor of the mirror structure; and
a photodetector proximate to a portion of a narrower end of the silicon waveguide, wherein light entering the silicon waveguide from the optical fiber is capable of being propagated in a first direction along a length of the silicon waveguide and in a second direction different from the first direction to the photodetector and the change in direction of propagation occurs proximate to the minor structure.
17. The apparatus of claim 16 , wherein the optical fiber is a multi-mode optical fiber, wherein the photodetector is a germanium photodetector, wherein the grating structure further comprises a planarized wafer being wafer-bonded with a silicon wafer such that upon flipping, the silicon water switches to an opposite end and wherein an original handle wafer of the silicon substrate is removed.
18. The apparatus of claim 16 , further comprising: a lens between the multi-mode fiber and the silicon waveguide input end, wherein the substrate is a silicon-on-insulator substrate.
19. The apparatus of claim 16 , wherein the buried oxide layer is placed between the silicon substrate and the silicon waveguide, wherein the etched grating de-multiplexer is formed in an etched region of the silicon waveguide in front of a V-groove wedge.