Display device including optical sensor and driving method thereof
An object is to provide a display device with low power consumption and good display quality. A first substrate is provided with a terminal portion, a pixel electrode, a switching transistor including an oxide semiconductor, a first optical sensor having high optical sensitivity to visible light, and a second optical sensor having optical sensitivity to infrared light and having lower optical sensitivity to visible light than the first optical sensor. The illuminance or color temperature around a display device is detected using the first and second optical sensors, and the luminance or color tone of a display image is adjusted. A second substrate is provided so as to face the first substrate, and is provided with a counter electrode. In a period for displaying a still image, the switching transistor is turned off so that the counter electrode is brought into a floating state.
1. A display device comprising:
a first substrate, wherein a terminal portion, a switching transistor, a first optical sensor, a second optical sensor, a pixel circuit including a plurality of pixels, and a driver circuit between the pixel circuit and a substrate edge are provided on the first substrate,
a second substrate provided with a counter electrode, the second substrate facing with the first substrate,
wherein the switching transistor includes an oxide semiconductor,
wherein the first optical sensor includes a first photoelectric conversion element including an amorphous semiconductor, and a first amplifier circuit,
wherein the second optical sensor includes a second photoelectric conversion element including a polycrystalline semiconductor, and a second amplifier circuit, and
wherein the counter electrode is electrically connected to the terminal portion through the switching transistor.
2. The display device according to claim 1 , wherein the first photoelectric conversion element includes amorphous silicon.
3. The display device according to claim 1 , wherein the second photoelectric conversion element includes polycrystalline silicon or microcrystalline silicon.
4. The display device according to claim 1 , wherein the oxide semiconductor has a carrier concentration of less than 1×10 14 /cm 3 .
5. The display device according to claim 1 , wherein the driver circuit includes a single crystal semiconductor.
6. The display device according to claim 1 , wherein at least one of the first amplifier circuit and the second amplifier circuit have a transistor including an oxide semiconductor.
7. The display device according to claim 1 , wherein the driver circuit is connected by a COG method, a wire bonding method, or a TAB method.
8. The display device according to claim 1 , further comprising:
a wiring formed along the substrate edge,
wherein the wiring connects the switching transistor and the terminal portion.
9. The display device according to claim 1 , wherein the counter electrode is in a floating state when the switching transistor is turned off.
10. The display device according to claim 1 , wherein the display device is a liquid crystal display device.
11. A display device comprising:
a first substrate, wherein a terminal portion, a switching transistor, a first optical sensor, a second optical sensor, a pixel circuit including a plurality of pixels, and a gate line driver circuit between the pixel circuit and a first substrate edge, and a signal line driver circuit between the pixel circuit and a second substrate edge are provided on the first substrate,
a second substrate provided with a counter electrode, the second substrate facing with the first substrate,
wherein the switching transistor includes an oxide semiconductor,
wherein the first optical sensor includes a first photoelectric conversion element including an amorphous semiconductor, and a first amplifier circuit,
wherein the second optical sensor includes a second photoelectric conversion element including a polycrystalline semiconductor, and a second amplifier circuit, and
wherein the counter electrode is electrically connected to the terminal portion through the switching transistor.
12. The display device according to claim 11 , wherein the first photoelectric conversion element includes amorphous silicon.
13. The display device according to claim 11 , wherein the second photoelectric conversion element includes polycrystalline silicon or microcrystalline silicon.
14. The display device according to claim 11 , wherein the oxide semiconductor has a carrier concentration of less than 1×10 14 /cm 3 .
15. The display device according to claim 11 , wherein each of the gate line driver circuit and the signal line driver circuit includes a single crystal semiconductor.
16. The display device according to claim 11 , wherein at least one of the first amplifier circuit and the second amplifier circuit have a transistor including an oxide semiconductor.
17. The display device according to claim 11 , wherein each of the gate line driver circuit and the signal line driver circuit is connected by a COG method, a wire bonding method, or a TAB method.
18. The display device according to claim 11 , further comprising:
a wiring provided on the first substrate,
wherein the wiring connects the switching transistor and the terminal portion.
19. The display device according to claim 11 , wherein the counter electrode is in a floating state when the switching transistor is turned off.
20. The display device according to claim 11 , wherein the display device is a liquid crystal display device.