IP Library Granted Patent US 9,088,006
Granted Patent B2
US 9,088,006 · App. 13/886,474 · Granted Jul 21, 2015

Light-emitting device and electronic device

Inventors: Shunpei Yamazaki (Tokyo, JP); Shingo Eguchi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5246H01L27/3244H01L27/3276H01L27/322H01L51/0097H01L2251/5338H01L2251/558
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Quick Facts
Patent No.
US 9,088,006
App. No.
13/886,474
Granted
Jul 21, 2015
Kind
B2
Abstract

A light-emitting device includes a light-emitting element between two substrates, a terminal portion which includes at least two terminals and is electrically connected to the light-emitting element, and an adhesive layer between the two substrates. A substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

Claims (27)

1. A light-emitting device comprising:

a first substrate;

a second substrate facing the first substrate;

a light-emitting element between the first substrate and the second substrate;

a third substrate partly overlapping with the first substrate;

a terminal portion electrically connected to the light-emitting element and over the third substrate, the terminal portion comprising at least two terminals; and

an adhesive layer between the first substrate and the second substrate,

wherein a coefficient of thermal expansion of the third substrate is 10 ppm/K or lower.

2. The light-emitting device according to claim 1 ,

wherein the adhesive layer is in contact with the third substrate.

3. The light-emitting device according to claim 1 ,

wherein the third substrate does not overlap with the light-emitting element.

4. The light-emitting device according to claim 1 ,

wherein an absolute value of a difference between a first coefficient of thermal expansion of the first substrate and a second coefficient of thermal expansion of the second substrate is within 10% of the first coefficient of thermal expansion or within 10% of the second coefficient of thermal expansion.

5. An electronic device comprising the light-emitting device according to claim 4 in a display portion.

6. A light-emitting device comprising:

a first substrate;

a second substrate facing the first substrate, the second substrate overlapping with a region of the first substrate;

a light-emitting element between the first substrate and the second substrate;

a terminal portion electrically connected to the light-emitting element and over an outer region of the region of the first substrate, the terminal portion comprising at least two terminals; and

an adhesive layer between the first substrate and the second substrate,

wherein a coefficient of thermal expansion of the first substrate is 10 ppm/K or lower.

7. The light-emitting device according to claim 6 ,

wherein an absolute value of a difference between a first coefficient of thermal expansion of the first substrate and a second coefficient of thermal expansion of the second substrate is within 10% of the first coefficient of thermal expansion or within 10% of the second coefficient of thermal expansion.

8. The light-emitting device according to claim 6 ,

wherein an FPC is electrically connected to the terminal portion though an anisotropic conductive layer.

9. An electronic device comprising the light-emitting device according to claim 6 in a display portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2013
From: YAMAZAKI, SHUNPEI; EGUCHI, SHINGO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 030344/0816 →
Priority Claims (4)
JP 2012-107283 · May 9, 2012 · national
JP 2012-107284 · May 9, 2012 · national
JP 2012-108190 · May 10, 2012 · national
JP 2013-044857 · Mar 7, 2013 · national
Continuity (1)
Related Publication 20130299789A1 · Nov 14, 2013