Intermediate transferrer, transfer device, and image forming apparatus
A volume resistivity RA of an elastic layer of an intermediate transferrer is larger than a volume resistivity RB of a base layer of the intermediate transferrer under a HT/HH environment, and is smaller than RB under a LT/LH environment. A transfer device includes the intermediate transferrer. A volume resistivity RC of a transfer member of the transfer device is smaller than RA and RB under any temperature or humidity environment. An image forming apparatus includes the transfer device. The apparatus can suppress the occurrence of a transfer failure due to a change in temperature or humidity.
1. An intermediate transfer belt comprising:
a base layer; and
an elastic layer formed on the base layer, wherein
the thickness of the base layer is 50 to 200 μm;
the thickness of the elastic layer is 100 to 500 μm; and
RA is more than RB (RA>RB) under an environment of a first temperature T1 or a first relative humidity RH1, and RA is less than RB (RA<RB) under an environment of a second temperature T2 higher than T1 or a second relative humidity RH2 higher than RH1, where RA represents a volume resistivity of the elastic layer and RB represents a volume resistivity of the base layer.
2. The intermediate transfer belt according to claim 1 , wherein
the following expression is satisfied under the environment of T1 or RH1:
0.5≦ RA′−RB′≦ 1.5
where RN represents a common logarithm value of RA, and RB′ represents a common logarithm value of RB.
3. The intermediate transfer belt according to claim 1 , wherein
the elastic layer has an ion conduction property, and the base layer has an electron conduction property.
4. A transfer device comprising:
an intermediate transfer belt comprising:
a base layer; and
an elastic layer formed on the base layer, wherein
the thickness of the base layer is 50 to 200 μm;
the thickness of the elastic layer is 100 to 500 μm; and
RA is more than RB (RA>RB) under an environment of a first temperature T1 or a first relative humidity RH1, and RA is less than RB (RA<RB) under an environment of a second temperature T2 higher than T1 or a second relative humidity RH2 higher than RH1, where RA represents a volume resistivity of the elastic layer and RB represents a volume resistivity of the base layer; and
a transfer member that applies a transfer voltage while being in contact with the base layer of the intermediate transferrer, wherein
RA is more than RB, and RB is more than RC (RA>RB>RC) under the environment of T1 or RH1, and RB is more than RA, and RA is more than RC (RB>RA>RC) under the environment of T2 or RH2, where RC represents a volume resistivity of a portion of the transfer member in contact with the base layer.
5. The transfer device according to claim 4 , wherein
the following expression is satisfied:
3.5≦ RA′−RC′≦ 4.5,
where RC′ represents a common logarithm value of RC.
6. The transfer device according to claim 5 , wherein the following expression is satisfied:
0.8≦ ra/rc≦ 1.2,
where “rc” represents an increment of RC′ when temperature changes from T1 to T2 or relative humidity changes from RH1 to RH2, and “ra” represents an increment of RN when temperature changes from T1 to T2 or relative humidity changes from RH1 to RH2.
7. An image forming apparatus comprising;
a transfer device that transfers a toner image formed on a photoconductor to a recording medium, wherein
the transfer device comprises:
an intermediate transfer belt comprising:
a base layer; and
an elastic layer formed on the base layer, wherein
the thickness of the base layer is 50 to 200 μm;
the thickness of the elastic layer is 100 to 500 μm; and
RA is more than RB (RA>RB) under an environment of a first temperature T1 or a first relative humidity RH1, and RA is less than RB (RA<RB) under an environment of a second temperature T2 higher than T1 or a second relative humidity RH2 higher than RH1, where RA represents a volume resistivity of the elastic layer and RB represents a volume resistivity of the base layer; and
a transfer member that applies a transfer voltage while being in contact with the base layer of the intermediate transferrer, wherein
RA is more than RB, and RB is more than RC (RA>RB>RC) under the environment of T1 or RH1, and RB is more than RA, and RA is more than RC (RB>RA>RC) under the environment of T2 or RH2, where RC represents a volume resistivity of a portion of the transfer member in contact with the base layer.