Light emitting diode and method of fabricating the same
Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
1. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate;
a doped region formed in the side surface of the unit chip; and
an extension electrode disposed on the side surface of the unit chip, and electrically connected to the first conductivity-type semiconductor layer,
wherein:
a side surface of the unit chip includes a concavo-convex structure having the shape of irregular vertical lines; and
the doped region has a higher conductivity than an undoped region.
2. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate; and
a doped region formed in the side surface of the unit chip,
wherein:
a side surface of the unit chip includes a concavo-convex structure having the shape of irregular vertical lines; and
a part of the side surface of the unit chip has both of the doped region and concavo-convex structure, and the other part of the side surface of the unit chip has the concavo-convex structure with no doped region.
3. A light emitting diode (LED), comprising a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate,
wherein:
a side surface of the unit chip has a first face perpendicular to an upper surface of the substrate, and a second face inclined with respect to the first face;
an angle θ 1 formed by a normal line to the first face and a normal line to the second face is less than 90 degrees;
the side surface of the unit chip further includes a third face inclined with respect to the first face;
an angle θ 2 formed by a normal line to the first face and a normal line to the third face is less than 90 degrees;
the θ 1 and the θ 2 have different values;
the first conductivity-type semiconductor layer is exposed in the second face;
the substrate is exposed in the third face; and
the θ 1 is greater than the θ 2 .
4. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate;
a doped region formed in the side surface of the unit chip; and
an extension electrode disposed on the side surface of the unit chip, and electrically connected to the first conductivity-type semiconductor layer,
wherein:
a side surface of the unit chip has a first face perpendicular to an upper surface of the substrate, and a second face inclined with respect to the first face;
an angle θ 1 formed by a normal line to the first face and a normal line to the second face is less than 90 degrees; and
the doped region has a higher conductivity than an undoped region.
5. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate; and
a doped region formed in the side surface of the unit chip,
wherein:
a side surface of the unit chip has a first face perpendicular to an upper surface of the substrate, and a second face inclined with respect to the first face;
an angle θ 1 formed by a normal line to the first face and a normal line to the second face is less than 90 degrees;
the doped region has a higher conductivity than an undoped region; and
a part of the side surface of the unit chip has both of the doped region and concavo-convex structure, and the other part of the side surface of the unit chip has the concavo-convex structure with no doped region.
6. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate; and
an extension electrode disposed on the side surface of the unit chip, and electrically connected to the first conductivity-type semiconductor layer,
wherein at least a part of a side surface of the unit chip has a doped region.