Subminiature led element and manufacturing method thereof

1. A manufacturing method of a subminiature LED element, the method comprising:

(a) forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer in order on a substrate;

(b) etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer so that the LED element has a diameter of a nanometer or micrometer level; and

(c) forming an insulation film on the outer circumference of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer, coating an upper portion of the insulation film with a hydrophobic film, and removing the substrate.

2. The manufacturing method of a subminiature LED element according to claim 1 , wherein the first conductive semiconductor layer includes at least one n-type semiconductor layer, and the second conductive semiconductor layer includes at least one p-type semiconductor layer.

3. The manufacturing method of a subminiature LED element according to claim 1 , wherein the step (b) includes:

(i) forming a second electrode layer, an insulation layer and a metal mask layer in order on the second conductive semiconductor layer;

(ii) forming a polymer layer on the metal mask layer and patterning the polymer layer with nanometer or micrometer intervals;

(iii) dry-etching or wet-etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer according to the pattern with nanometer or micrometer intervals; and

(iv) removing the insulation layer, the metal mask layer and the polymer layer.

4. The manufacturing method of a subminiature LED element according to claim 1 , wherein the step (b) includes:

(i) forming a second electrode layer, an insulation layer and a metal mask layer on the second conductive semiconductor layer;

(ii) forming a nanosphere or microsphere monolayer on the metal mask layer and performing self-assembling;

(iii) dry-etching or wet-etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer according to the pattern with nanometer or micrometer intervals; and

(iv) removing the insulation layer, the metal mask layer and the monolayer.

5. The manufacturing method of a subminiature LED element according to claim 4 , wherein the nanosphere or microsphere is made of polystyrene.

6. The manufacturing method of a subminiature LED element according to claim 3 , wherein the step (c) further includes:

(i) forming a support film on the second electrode layer;

(ii) the forming of the insulation film on the outer circumference including the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer;

(iii) the coating of the upper portion of the insulation film with the hydrophobic film;

(iv) the removing of the substrate;

(v) forming a first electrode layer at the lower portion of the first conductive semiconductor layer; and

(vi) removing the support film to manufacture a plurality of subminiature LED elements.

7. The manufacturing method of a subminiature LED element according to claim 3 , wherein the step (c) further includes:

(i) forming a support film on the second electrode layer;

(ii) the forming of the insulation film on the outer circumference including the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer;

(iii) the coating of the upper portion of the insulation film with the hydrophobic film;

(iv) the removing of the substrate;

(v) forming a first electrode layer at the lower portion of the first conductive semiconductor layer;

(vi) forming a coupling linker on at least one surface of the first electrode layer and the second electrode layer; and

(vii) removing the support film to manufacture a plurality of subminiature LED elements.

8. A subminiature LED element, comprising:

a first conductive semiconductor layer;

an active layer formed on the first conductive semiconductor layer; and

a semiconductor light emission element of a micrometer or nanometer size including a second conductive semiconductor layer formed on the active layer,

wherein the outer circumference of the semiconductor light emission element is coated with an insulation film, and

wherein an upper portion of the insulation film is coated with a hydrophobic film.

9. The subminiature LED element according to claim 8 , wherein a first electrode layer is formed at the lower portion of the first conductive semiconductor layer, and a second electrode layer is formed at the upper portion of the second conductive semiconductor layer.

10. The subminiature LED element according to claim 8 , wherein a coupling linker for self-assembling is provided to at least one of the lower surface of the first electrode layer and the upper surface of the second electrode layer.

11. The subminiature LED element according to claim 10 , wherein the coupling linker is complementarily coupled to a substrate of an LED display.

12. The subminiature LED element according to claim 8 , wherein the first conductive semiconductor layer includes at least one n-type semiconductor layer, and the second conductive semiconductor layer includes at least one p-type semiconductor layer.

13. The subminiature LED element according to claim 8 , wherein the insulation film includes at least one selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 and TiO 2 , the hydrophobic film includes at least one of SAMs and fluorine polymer, and the coupling linker includes a thiol group.