IP Library Granted Patent US 9,112,504
Granted Patent B2
US 9,112,504 · App. 14/117,170 · Granted Aug 18, 2015

High frequency switch

Inventors: Fuminori Sameshima (Tokyo, JP); Masahiko Kohama (Tokyo, JP); Takuo Morimoto (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H03K17/74H01P1/15H04B1/48H03K17/76
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Quick Facts
Patent No.
US 9,112,504
App. No.
14/117,170
Granted
Aug 18, 2015
Kind
B2
Abstract

A compact high frequency switch needing no external control signal is obtained. The high frequency switch includes an anti-parallel diode (first anti-parallel diode) having one end and another end coupled with an antenna terminal (first high-frequency-signal input/output terminal) and a transmitting terminal (second high-frequency-signal input/output terminal), respectively, and becoming a conduction state in the input power not less than predetermined high frequency power. When the high frequency switch is an SPDT type, such a switch may include a ¼-wavelength line in the use frequency of the high frequency switch having one end and another end coupled with the antenna terminal and a receiving terminal (third high-frequency-signal input/output terminal), respectively, and an anti-parallel diode (second anti-parallel diode) coupled between the receiving terminal and a ground and becoming a conduction state in the input power not less than predetermined high frequency power.

Claims (38)

1. A high frequency switch comprising;

a first anti-parallel diode which includes two or more anti-parallel diodes connected in series, one end of the first anti-parallel diode being coupled with a first high-frequency-signal input/output terminal, another end of the first anti-parallel diode being coupled with a second high-frequency-signal input/output terminal, and the first anti-parallel diode becoming a conduction state when input power of equal to or greater than a predetermined high frequency power is input;

a first inductance that is coupled in parallel with the first anti-parallel diode; and

a second inductance coupled between any terminal of the two or more anti-parallel diodes of the first anti-parallel diode and a ground.

2. The high frequency switch according to claim 1 , further comprising a ¼-wavelength line in a use frequency of the high frequency switch, the ¼-wavelength line including one end coupled with the first high-frequency-signal input/output terminal and another end coupled with a third high-frequency-signal input/output terminal.

3. A high frequency switch comprising;

a first anti-parallel diode which includes two or more anti-parallel diodes connected in series, one end of the first anti-parallel diode being coupled with a first high-frequency-signal input/output terminal, another end of the first anti-parallel diode being coupled with a second high-frequency-signal input/output terminal, and the first anti-parallel diode becoming a conduction state when input power of equal to or greater than a predetermined high frequency power is input;

a first ¼-wavelength line in a use frequency of the high frequency switch, the first ¼-wavelength line being coupled in series between two of the two or more anti-parallel diodes of the first anti-parallel diode;

a first inductance coupled in parallel with the first anti-parallel diode; and

a second inductance coupled between any terminal of the two or more anti-parallel diodes of the first anti-parallel diode and a ground.

4. The high frequency switch according to claim 3 , further comprising a second ¼-wavelength line in the use frequency of the high frequency switch, the second ¼-wavelength line including one end coupled with the first high-frequency-signal input/output terminal and another end coupled with a third high-frequency-signal input/output terminal.

5. A high frequency switch comprising:

a first anti-parallel diode which includes two or more anti-parallel diodes connected in series, one end of the first anti-parallel diode being coupled with a first high-frequency-signal input/output terminal, another end of the first anti-parallel diode being coupled with a second high-frequency-signal input/output terminal, and the first anti-parallel diode becoming a conduction state when input power of equal to or greater than a predetermined high frequency power is input;

a first ¼-wavelength line in a use frequency of the high frequency switch, the first ¼-wavelength line including one end coupled with the first high-frequency-signal input/output terminal and another end coupled with a third high-frequency-signal input/output terminal;

a second anti-parallel diode which is coupled between the third high-frequency-signal input/output terminal and a ground, the second anti-parallel diode becoming a conduction state when input power of equal to or greater than predetermined high frequency power is input;

a first inductance that is coupled in parallel with the first anti-parallel diode; and

a second inductance coupled between any terminal of the two or more anti-parallel diodes of the first anti-parallel diode and the ground.

6. A high frequency switch comprising:

a first anti-parallel diode which includes two or more anti-parallel diodes connected in series, one end of the first anti-parallel diode being coupled with a first high-frequency-signal input/output terminal, another end of the first anti-parallel diode being coupled with a second high-frequency-signal input/output terminal, and the first anti-parallel diode becoming a conduction state when input power of equal to or greater than a predetermined high frequency power is input;

a first ¼-wavelength line in a use frequency of the high frequency switch, the first ¼-wavelength line including one end coupled with the first high-frequency-signal input/output terminal and another end coupled with a third high-frequency-signal input/output terminal;

a second anti-parallel diode which is coupled between the third high-frequency-signal input/output terminal and a ground, the second anti-parallel diode becoming a conduction state when input power of equal to or greater than predetermined high frequency power is input; and

a second ¼-wavelength line in the use frequency of the high frequency switch, the second ¼-wavelength line being coupled in series between two of the two or more anti-parallel diodes of the first anti-parallel diode.

7. The high frequency switch according to claim 6 , further comprising an inductance coupled between the first anti-parallel diode coupled with the second high-frequency-signal input/output terminal at the first high-frequency-signal-input/output-terminal side and the ground.

8. A high frequency switch, comprising:

a first anti-parallel diode which includes two or more anti-parallel diodes connected in series, one end of the first anti-parallel diode being coupled with a first high-frequency-signal input/output terminal, another end of the first anti-parallel diode being coupled with a second high-frequency-signal input/output terminal, and the first anti-parallel diode becoming a conduction state when input power of equal to or greater than a predetermined high frequency power is input;

a first ¼-wavelength line in a use frequency of the high frequency switch which includes one end coupled with the first high-frequency-signal input/output terminal and another end coupled with a third high-frequency-signal input/output terminal;

a second anti-parallel diode which is coupled between the third high-frequency-signal input/output terminal and a ground, the second anti-parallel diode becoming a conduction state when input power of equal to or greater than predetermined high frequency power is input;

a first inductance coupled in parallel with the first anti-parallel diode; and

a second inductance coupled between any terminal of the two or more anti-parallel diodes of the first anti-parallel diode and a ground.

9. A high frequency switch comprising;

a first anti-parallel diode which includes one end coupled with a first high-frequency-signal input/output terminal and another end coupled with a second high-frequency-signal input/output terminal, the first anti-parallel diode becoming a conduction state when input power of equal to or greater than a predetermined high frequency power is input;

a first inductance coupled between the first anti-parallel diode coupled with the second high-frequency-signal input/output terminal at the first high-frequency-signal-input/output-terminal side and a ground; and

a second inductance coupled in parallel with the first anti-parallel diode.

10. The high frequency switch according to claim 9 , further comprising a ¼-wavelength line in a use frequency of the high frequency switch, the ¼-wavelength line including one end coupled with the first high-frequency-signal input/output terminal and another end coupled with a third high-frequency-signal input/output terminal.

11. The high frequency switch according to claim 10 , further comprising a second anti-parallel diode which is coupled between the third high-frequency-signal input/output terminal and a ground, the second anti-parallel diode becoming a conduction state when input power of equal to or greater than predetermined high frequency power is input.

12. The high frequency switch according to claim 9 , wherein

the first anti-parallel diode comprises two or more anti-parallel diodes connected in series, and

the high frequency switch further comprises a ¼-wavelength line in a use frequency of the high frequency switch, the ¼-wavelength line being coupled in series between two of the two or more anti-parallel diodes of the first anti-parallel diode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2013
From: SAMESHIMA, FUMINORI; KOHAMA, MASAHIKO; MORIMOTO, TAKUO
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 031584/0512 →
Priority Claims (1)
JP 2011-119379 · May 27, 2011 · national
Continuity (1)
Related Publication 20140124908A1 · May 8, 2014