Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.
1. A semiconductor device, comprising:
a substrate on which a semiconductor circuit is formed;
an interlayer insulating film in which a contact hole is formed on the substrate;
a catalyst metal film on a side wall of the contact hole;
catalyst metal particles on a bottom of the contact hole;
graphene on the catalyst metal film;
carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles; and
an embedded film in the contact hole.
2. The device according to claim 1 , wherein an aspect ratio (depth/diameter) of the contact hole is not smaller than 2.
3. The device according to claim 1 , wherein the catalyst metal is metal or alloy containing one or more elements selected from a group including Co, Ni, and Fe.
4. The device according to claim 1 , wherein an average thickness of the catalyst metal film is not less than 5 nm and not more than 20 nm.
5. The device according to claim 1 , wherein a metal film, an alloy film, or a metal nitride film containing one or more elements selected from a group including Ti, Ta, Mn, Mo, V, Ru, and Cu is provided between the catalyst metal film and the interlayer insulating film.