Single-package bridge-type magnetic-field angle sensor

1. A single-package magnetic rotation sensor, the sensor comprising

One pair of MTJ or GMR magnetoresistive sensor chips, the MTJ or GMR magnetoresistive sensor chips are adhered to a semiconductor package lead frame;

One of the MTJ or GMR magnetoresistive sensor chips is oriented by 90 degrees with respect to the other one in the pair;

Each MTJ or GMR magnetoresistive sensor chip is a half-bridge, containing a reference resistor with a fixed resistance and a sensing resistor with a resistance varying in response to a magnetic field;

Each of the reference resistor and the sensing resistor contains a plurality of MTJ or GMR sensor elements interconnected as a single magnetoresistive element in row arrays and bar-shaped permanent magnets between the MTJ or GMR sensor elements in the rows to bias the magnetoresistive element;

The sensing resistors have resistance that is linearly proportional to an applied magnetic field over some portion of their magnetoresistive transfer curves;

The bond pads of the sensor chip are designed such that more than one wire bond may be attached to each side of the string of MTJ or GMR sensor elements;

The MTJ or GMR magnetoresistive sensor chips are wire bonded to each other and the semiconductor package lead frame in order to produce a bridge sensor; and

The semiconductor package lead frame and MTJ or GMR magnetoresistive sensor chips are encapsulated in plastic to form a standard semiconductor package.

2. A single-package magnetic rotation sensor, comprising:

A first and a second full-bridge sensor each of the first and second full-bridge sensors comprising two pairs of MTJ or GMR magnetoresistive sensor chips, and the MTJ or GMR magnetoresistive sensor chips are adhered to a semiconductor package lead frame;

Each MTJ or GMR magnetoresistive sensor chip is a half-bridge, containing a reference resistor with a fixed resistance and a sensing resistor with a resistance varying in response to a magnetic field;

Each of the reference resistor and the sensing resistor contain a plurality of MTJ or GMR sensor elements interconnected as a single magnetoresistive element in row arrays with bar-shaped permanent magnets between MTJ or GMR sensor element rows to bias the magnetoresistive elements;

The sensing resistors have resistance that is linearly proportional to an applied magnetic field over some portion of their magnetoresistive transfer curves;

The bond pads of the MTJ or GMR sensor chip are designed such that more than one wire bond may be attached to each side of the string of MTJ or GMR sensor elements;

The MTJ or GMR magnetoresistive sensor chips are wire bonded to each other and the semiconductor package lead frame in order to produce a bridge sensor; and

The semiconductor package lead frame and MTJ or GMR magnetoresistive sensor chips are encapsulated in plastic to form a standard semiconductor package.

3. A single-package magnetic rotation sensor as claimed in claim 2 , wherein each full bridge sensor is comprised of two sensor chips rotated by 180 degrees with respect to each other, and the full bridge sensors are aligned at 90 degrees with respect to each other in order to enable two-axis sensing.

4. A single-package magnetic rotation sensor as in claim 1 , wherein the magnetoresistive elements are patterned in an elliptical shape.

5. A single-package magnetic rotation sensor as in claim 1 , wherein the magnetoresistive elements of the reference resistor are patterned in different shape aspect ratio from the magnetoresistive elements of the sensing resistor.

6. A single-package magnetic rotation sensor as in claim 1 , wherein the reference resistor is screened from an applied magnetic field by one or more magnetic shields.

7. A single-package magnetic rotation sensor as claimed in claim 1 , wherein said MTJ or GMR magnetoresistive sensor chips are biased using a voltage or a current.

8. A single-package magnetic rotation sensor as in claim 1 , wherein the MTJ or GMR magnetoresistive sensor chips are tested and sorted before assembly in order to match their transfer curve characteristics.

9. A single-package magnetic rotation sensor as claimed in claim 1 , wherein the MTJ or GMR magnetoresistive sensor chips are set side-by-side for use in detecting a magnetic field angle when there is only a small gradient.

10. A single-package magnetic rotation sensor as claimed in claim 1 , wherein the MTJ or GMR magnetoresistive sensor chips are arranged such that the MTJ or GMR magnetoresistive sensor chips have a common center in order to provide the capability to measure an angle in the presence of a large magnetic field gradient.

11. A single-package magnetic rotation sensor as in claim 2 , wherein the magnetoresistive elements are patterned in an elliptical shape.

12. A single-package magnetic rotation sensor as in claim 2 , wherein the magnetoresistive elements of the reference resistor are patterned in different shape aspect ratio from the magnetoresistive elements of the sensing resistor.

13. A single-package magnetic rotation sensor as claimed in claim 2 , wherein said MTJ or GMR magnetoresistive sensor chips are biased using a voltage or a current.

14. A single-package magnetic rotation sensor as in claim 2 , wherein the MTJ or GMR magnetoresistive sensor chips are tested and sorted before assembly in order to match their transfer curve characteristics.

15. A single-package magnetic rotation sensor as claimed in claim 2 , wherein the MTJ or GMR magnetoresistive sensor chips are set side-by-side for use in detecting a magnetic field angle when there is only a small gradient.

16. A single-package magnetic rotation sensor as claimed in claim 2 , wherein the MTJ or GMR magnetoresistive sensor chips are arranged such that the MTJ or GMR magnetoresistive sensor chips have a common center in order to provide the capability to measure an angle in the presence of a large magnetic field gradient.