IP Library Granted Patent US 9,128,142
Granted Patent B1
US 9,128,142 · App. 14/263,523 · Granted Sep 8, 2015

Ferromagnets as pure spin current generators and detectors

Inventors: Danru Qu (Baltimore, MD); Bingfeng Miao (Nanjing, CN); Chia-Ling Chien (Cockeysville, MD); Ssu-Yen Huang (Taipei, TW)
Assignee: The Johns Hopkins University
G01R33/1284H01L43/04H01L43/06H01L43/10H01L43/14
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Quick Facts
Patent No.
US 9,128,142
App. No.
14/263,523
Granted
Sep 8, 2015
Kind
B1
Abstract

Provided is a spintronics device. The spintronics can include a ferromagnetic metal layer, a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and a negative electrode disposed on a second surface portion of the ferromagnetic metal.

Claims (37)

1. A spintronics device, comprising:

a ferromagnetic metal layer;

a magnetic dielectric layer, wherein the ferromagnetic metal layer is disposed on the magnetic dielectric layer;

a substrate, wherein the magnetic dielectric layer is disposed between the substrate and the ferromagnetic metal layer;

a positive electrode disposed on a first surface portion of the ferromagnetic metal layer; and

a negative electrode disposed on a second surface portion of the ferromagnetic metal layer.

2. The spintronics device of claim 1 , wherein the magnetic dielectric layer comprises a ferrimagnetic dielectric, a ferromagnetic dielectric, or an antiferromagnetic dielectric.

3. The spintronics device of claim 1 , wherein the magnetic dielectric layer comprises Y 3 Fe 5 O 12 (YIG).

4. The spintronics device of claim 1 , wherein the ferromagnetic metal layer comprises at least one of cobalt, iron, nickel, or alloys thereof.

5. The spintronics device of claim 4 , wherein the ferromagnetic metal layer comprises permalloy.

6. The spintronics device of claim 1 , wherein the magnetic dielectric layer comprises a thickness in the range of about 10 nm to about 1 mm, and the ferromagnetic metal layer comprises a thickness in the range of about 3 nm to about 30 nm.

7. A spintronics system, comprising:

a spintronics device comprising

a ferromagnetic metal layer,

a magnetic dielectric layer, wherein the ferromagnetic metal layer is disposed on the magnetic dielectric layer,

a substrate, wherein the magnetic dielectric layer is disposed between the substrate and the ferromagnetic metal layer,

a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and

a negative electrode disposed on a second surface portion of the ferromagnetic metal layer; and

a magnetic field source for providing magnetic field to the spintronics device and located to control the magnetic moment of the magnetic dielectric layer.

8. The spintronics system of claim 7 , further comprising a voltage measuring device in electrical communication with the positive and negative electrodes, wherein the magnetic dielectric layer comprises a spin current generator and the ferromagnetic metal layer comprises a spin current detector.

9. The spintronics system of claim 7 , further comprising a current source in electrical communication with the positive and negative electrodes, wherein the magnetic dielectric layer comprises a spin current detector and the ferromagnetic metal layer comprises a spin current generator.

10. The spintronics system of claim 7 , wherein the magnetic dielectric layer comprises a ferrimagnetic dielectric, a ferromagnetic dielectric, or an antiferromagnetic dielectric.

11. The spintronics system of claim 7 , wherein the magnetic dielectric layer comprises Y 3 Fe 5 O 12 (YIG).

12. The spintronics system of claim 7 , wherein the ferromagnetic metal layer comprises at least one of cobalt, iron, nickel, or alloys thereof.

13. The spintronics system of claim 12 , wherein the ferromagnetic metal layer comprises permalloy.

14. The spintronics system of claim 7 , further comprising a heat source on the ferromagnetic metal layer that forms a temperature gradient across at least a portion of the magnetic dielectric layer.

15. The spintronics system of claim 7 , further comprising a thermocouple connected to the magnetic dielectric layer and configured to measure a temperature difference at least across the magnetic dielectric layer.

16. The spintronics system of claim 7 , further comprising a microwave source that provides microwaves to the spintronics device at a resonance frequency of the magnetic dielectric layer and located such that the magnetic dielectric layer generates spin carriers.

17. A method of making a spintronics device, comprising:

forming a magnetic dielectric layer;

forming a ferromagnetic metal layer on the magnetic dielectric layer;

forming a positive electrode on a first surface portion of the ferromagnetic metal layer; and

forming a negative electrode on a second surface portion of the ferromagnetic metal layer.

18. The spintronics system of claim 7 further comprising a cold sink on a bottom surface of the spintronics device.

19. The spintronics system of claim 7 , wherein the magnetic moment of the magnetic dielectric determines spin orientation in a pure spin current when the magnetic dielectric is used as a spin current generator.

20. The spintronics system of claim 7 , wherein the magnetic moment of the magnetic dielectric controls a spin current absorption and reflection when the magnetic dielectric is used as a spin current detector.

21. The spintronics system of claim 20 , wherein the spin current absorption and reflection are controlled at an interface between the ferromagnetic layer and the magnetic dielectric layer.

Assignments (3)
CONFIRMATORY LICENSE Recorded Jun 12, 2018
From: JOHNS HOPKINS UNIVERSITY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 046350/0358 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE'S ADDRESS PREVIOUSLY RECORDED ON REEL 032771 FRAME 0926. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT ADDRESS FOR ASSIGNEE IS 3400 N. CHARLES STREET, BALTIMORE, MD 21218. Recorded May 2, 2014
From: QU, DANRU; MIAO, BINGFENG; CHIEN, CHIA-LING; HUANG, SSU-YEN
To: THE JOHNS HOPKINS UNIVERSITY
Reel/Frame 032815/0247 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 28, 2014
From: QU, DANRU; MIAO, BINGFENG; CHIEN, CHIA-LING; HUANG, SSU-YEN
To: THE JOHNS HOPKINS UNIVERSITY
Reel/Frame 032771/0926 →