Semiconductor device and method for manufacturing the same
It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
1. A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer; and
a third insulating layer formed of silicon oxide over the oxide semiconductor layer,
wherein the second insulating layer is formed over the third insulating layer,
wherein in the third insulating layer the concentration of a boron element is lower than that in the first and second insulating layers.
2. The semiconductor device according to claim 1 , wherein the first insulating layer and the second insulating layer each contain the boron element at less than or equal to 1×10 22 cm −3 .
3. The semiconductor device according to claim 1 , wherein the second insulating layer is in contact with the oxide semiconductor layer.
4. The semiconductor device according to claim 1 , wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.
5. A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer; and
a third insulating layer formed of silicon oxide over the oxide semiconductor layer,
wherein the second insulating layer is formed over the third insulating layer,
wherein in the third insulating layer the concentration of an aluminum element is lower than that in the first and second insulating layers.
6. The semiconductor device according to claim 5 , wherein the first insulating layer and the second insulating layer each contain the aluminum element at less than or equal to 1×10 22 cm −3 .
7. The semiconductor device according to claim 5 , wherein the second insulating layer is in contact with the oxide semiconductor layer.
8. The semiconductor device according to claim 5 , wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.
9. A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer; and
a third insulating layer formed of silicon oxide over the oxide semiconductor layer,
wherein the second insulating layer is formed over the third insulating layer,
wherein in the third insulating layer the concentration of a phosphorus element is lower than that in the first and second insulating layers.
10. The semiconductor device according to claim 9 , wherein the first insulating layer and the second insulating layer each contain the phosphorus element at less than or equal to 1×10 22 cm −3 .
11. The semiconductor device according to claim 9 , wherein the second insulating layer is in contact with the oxide semiconductor layer.
12. The semiconductor device according to claim 9 , wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.