IP Library Granted Patent US 9,130,182
Granted Patent B2
US 9,130,182 · App. 14/313,356 · Granted Sep 8, 2015

Light-emitting element, lighting device, light-emitting device, and electronic device

Inventors: Hiromi Seo (Kanagawa, JP); Tatsuyoshi Takahashi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5012H01L51/5056H01L51/5072H01L51/5206H01L51/5221
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Quick Facts
Patent No.
US 9,130,182
App. No.
14/313,356
Granted
Sep 8, 2015
Kind
B2
Abstract

A light-emitting element with high emission efficiency is provided. A light-emitting element with a long lifetime is provided. The light-emitting element includes an anode; a hole-transport layer over the anode, containing a hole-transport compound and a compound; a light-emitting layer over the hole-transport layer, containing a host material and a guest material; and a cathode over the light-emitting layer. The host material is an electron-transport compound. The guest material and the compound are each independently a phosphorescent compound or a thermally activated delayed fluorescence material. A peak of an emission spectrum of the compound is on a shorter wavelength side than a peak of an emission spectrum of the guest material. Only the guest material emits light.

Claims (43)

1. A light-emitting element comprising:

an anode;

a hole-transport layer over the anode, the hole-transport layer containing a hole-transport compound and a first compound;

a light-emitting layer over the hole-transport layer, the light-emitting layer containing a host material and a guest material; and

a cathode over the light-emitting layer,

wherein the first compound is any one of a phosphorescent compound and a thermally activated delayed fluorescence material,

wherein the host material is an electron-transport compound,

wherein the guest material is any one of a phosphorescent compound and a thermally activated delayed fluorescence material,

wherein a peak of an emission spectrum of the first compound is on a shorter wavelength side than a peak of an emission spectrum of the guest material, and

wherein only the guest material emits light.

2. The light-emitting element according to claim 1 , wherein the hole-transport compound has an electron-blocking property.

3. The light-emitting element according to claim 1 ,

wherein the electron-transport compound has a hole-blocking property.

4. The light-emitting element according to claim 1 ,

wherein the electron-transport compound forms an exciplex in combination with the first compound.

5. The light-emitting element according to claim 1 ,

wherein the first compound and the guest material are each an organometallic complex containing iridium.

6. The light-emitting element according to claim 1 ,

wherein the peak of the emission spectrum of the first compound is determined by a photoluminescence method in a solvent, and

wherein the peak of the emission spectrum of the first compound is determined by a photoluminescence method in the solvent.

7. A lighting device comprising the light-emitting element according to claim 1 .

8. A light-emitting element comprising:

an anode;

a hole-transport layer over the anode, the hole-transport layer containing a hole-transport compound and a first compound;

a light-emitting layer over and in contact with the hole-transport layer, the light-emitting layer containing a host material and a guest material; and

a cathode over the light-emitting layer,

wherein the first compound is any one of a phosphorescent compound and a thermally activated delayed fluorescence material,

wherein the host material is an electron-transport compound,

wherein the guest material is any one of a phosphorescent compound and a thermally activated delayed fluorescence material,

wherein a peak of an emission spectrum of the first compound is on a shorter wavelength side than a peak of an emission spectrum of the guest material, and

wherein only the guest material emits light.

9. The light-emitting element according to claim 8 ,

wherein the hole-transport compound has an electron-blocking property.

10. The light-emitting element according to claim 8 ,

wherein the electron-transport compound has a hole-blocking property.

11. The light-emitting element according to claim 8 ,

wherein the electron-transport compound forms an exciplex in combination with the first compound.

12. The light-emitting element according to claim 8 ,

wherein the first compound and the guest material are each an organometallic complex containing iridium.

13. The light-emitting element according to claim 8 ,

wherein the peak of the emission spectrum of the first compound is determined by a photoluminescence method in a solvent, and

wherein the peak of the emission spectrum of the first compound is determined by a photoluminescence method in the solvent.

14. A lighting device comprising the light-emitting element according to claim 8 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2014
From: SEO, HIROMI; TAKAHASHI, TATSUYOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 033273/0645 →
Priority Claims (1)
JP 2013-135716 · Jun 28, 2013 · national
Continuity (1)
Related Publication 20150001502A1 · Jan 1, 2015