Display device, electronic apparatus, and method of fabricating the display device
View Patent ↗It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.
1. An active matrix display device comprising:
a transistor over a first substrate;
a first insulating layer over the transistor;
a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the transistor;
a second insulating layer to cover an end portion of the pixel electrode;
a light emitting layer comprising an organic material over the pixel electrode;
a second electrode over the light emitting layer;
a layer comprising silicon nitride over the second electrode; and
a second substrate over the layer, the second substrate being fixed to the first substrate,
wherein the second electrode covers the second insulating layer,
wherein the second insulating layer comprises an insulating material,
wherein the second electrode is provided over a projecting portion, and
wherein the projecting portion comprises the insulating material.
2. The active matrix display device according to claim 1 , wherein the transistor is a switching element.
3. The active matrix display device according to claim 1 , wherein the second insulating layer comprises an organic resin.
4. The active matrix display device according to claim 1 , wherein the second substrate is provided with a color filter.
5. The active matrix display device according to claim 1 , wherein the light emitting layer is capable of emitting white light.
6. The active matrix display device according to claim 1 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.
7. The active matrix display device according to claim 1 , wherein the second insulating layer comprises polyimide.
8. The active matrix display device according to claim 1 , wherein the layer is in direct contact with the second substrate.
9. The active matrix display device according to claim 1 , wherein the layer is in direct contact with the second electrode.
10. The active matrix display device according to claim 1 , wherein the second substrate is positioned over the second insulating layer with a space interposed therebetween.
11. An active matrix display device comprising:
a transistor over a first substrate;
a first insulating layer over the transistor;
a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the transistor;
a second insulating layer to cover an end portion of the pixel electrode;
a light emitting layer comprising an organic material over the pixel electrode;
a second electrode over the light emitting layer, wherein the second electrode is capable of transmitting light emitted from the light emitting layer;
a layer comprising silicon nitride over the second electrode; and
a second substrate over the layer, the second substrate being fixed to the first substrate,
wherein the active matrix display device is configured to emit light through the second substrate,
wherein the second electrode covers the second insulating layer,
wherein the second insulating layer comprises an insulating material,
wherein the second electrode is provided over a projecting portion, and
wherein the projecting portion comprises the insulating material.
12. The active matrix display device according to claim 11 , wherein the transistor is a switching element.
13. The active matrix display device according to claim 11 , wherein the second insulating layer comprises an organic resin.
14. The active matrix display device according to claim 11 , wherein the second substrate is provided with a color filter.
15. The active matrix display device according to claim 11 , wherein the light emitting layer is capable of emitting white light.
16. The active matrix display device according to claim 11 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.
17. The active matrix display device according to claim 11 , wherein the second insulating layer comprises polyimide.
18. The active matrix display device according to claim 11 , wherein the layer is in direct contact with the second substrate.
19. The active matrix display device according to claim 11 , wherein the layer is in direct contact with the second electrode.
20. The active matrix display device according to claim 11 , wherein the second substrate is positioned over the second insulating layer with a space interposed therebetween.
21. An active matrix display device comprising:
a transistor over a first substrate;
a first insulating layer over the transistor;
a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the transistor;
a second insulating layer to cover an end portion of the pixel electrode;
a light emitting layer comprising an organic material over the pixel electrode;
a second electrode over the light emitting layer;
a layer comprising silicon nitride over the second electrode; and
a second substrate over the layer, the second substrate being fixed to the first substrate,
wherein the active matrix display device is configured to emit light through the first substrate,
wherein the second insulating layer comprises an insulating material,
wherein the second electrode is provided over a projecting portion, and
wherein the projecting portion comprises the insulating material.
22. The active matrix display device according to claim 21 , wherein the second electrode covers the second insulating layer.
23. The active matrix display device according to claim 21 , wherein the transistor is a switching element.
24. The active matrix display device according to claim 21 , wherein the second insulating layer comprises an organic resin.
25. The active matrix display device according to claim 21 , wherein the light emitting layer is capable of emitting white light.
26. The active matrix display device according to claim 21 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.
27. The active matrix display device according to claim 21 , wherein the second insulating layer comprises polyimide.
28. The active matrix display device according to claim 21 , wherein the layer is in direct contact with the second substrate.
29. The active matrix display device according to claim 21 , wherein the layer is in direct contact with the second electrode.
30. The active matrix display device according to claim 21 , wherein the second substrate is positioned over the second insulating layer with a space interposed therebetween.