Low profile interposer with stud structure

1. An interposer, comprising:

a substrate having a periphery area and a die attach area, the periphery area having a first contact pad structure and the die attach area having a second contact pad structure;

a first stud and a second stud operably coupled to the first contact pad structure, the second contact pad structure being free of any studs; and

a solder ball seated on the first contact pad structure and formed around vertical sidewalls of the first stud;

wherein the first stud is configured to regulate a vertical collapse of the solder ball when a top package is mounted to the substrate.

2. The interposer of claim 1 , wherein the first contact pad structure comprises a single solid pad.

3. The interposer of claim 1 , wherein the first stud is formed from at least two stacked studs.

4. The interposer of claim 1 , wherein the substrate has a third contact pad structure on an opposing side of the substrate relative to the first contact pad structure, the third contact pad structure having a third stud operably coupled thereto.

5. The interposer of claim 1 , wherein a logic chip is mounted to the second contact pad structure of the substrate to form a bottom package.

6. A package-on-package (PoP) device, comprising:

an interposer including a substrate having a first side opposing a second side, a first stud disposed within a solder ball seated on a first contact pad structure on the first side, and a second stud mounted on a second contact pad structure on the second side;

a die mounted on the first side of the interposer, wherein the first stud extends farther from the interposer than an uppermost surface of the die, electrical connections directly between the die and the interposer being free of studs extending from a contact pad; and

a top package mounted to the interposer using the first stud and the solder ball, the first stud regulating a vertical collapse of the solder ball.

7. The PoP device of claim 6 , wherein the die is a logic chip to form a bottom package.

8. The PoP device of claim 6 , wherein at least one of the first stud and the second stud is formed from at least two stacked studs.

9. A method of forming an interposer, comprising:

forming a first contact pad structure and a second contact pad structure on a first side of a substrate;

mounting a first stud on the first contact pad structure, leaving the second contact pad structure free of any studs;

forming a solder ball around at least a portion of vertical sidewalls of the first stud; and

forming a second stud on a second side of the substrate, the second side of the substrate opposing the first side of the substrate;

wherein the first stud is configured to regulate a vertical collapse of the solder ball when a top package is mounted to the substrate.

10. The interposer of claim 1 , wherein the first contact pad structure comprises:

a contact pad, wherein the first stud is coupled to the contact pad;

a first metal pad in a topmost metallization layer directly contacting the contact pad without any intervening vias;

a second metal pad in a next topmost metallization layer, the second metal pad being vertically aligned below the first metal pad, the first metal pad being interposed between the contact pad and the second metal pad;

a dielectric layer interposed between the first metal pad and the second metal pad; and

a plurality of vias extending through the dielectric layer, the plurality of vias interposed directly between the first metal pad and the second metal pad.

11. The interposer of claim 1 , wherein the first contact pad structure comprises:

a first metal pad in a topmost metallization layer;

a passivation layer overlying the first metal pad, the passivation layer having openings exposing the first metal pad; and

a contact pad overlying the passivation layer, the contact pad extending through the openings in the passivation layer to the first metal pad, wherein the first stud is coupled to the contact pad.

12. The interposer of claim 11 , further comprising:

a second metal pad in a next topmost metallization layer, the second metal pad being vertically aligned below the first metal pad, the first metal pad being interposed between the contact pad and the second metal pad, the first metal pad being electrically coupled to the second metal pad by a plurality of vias.

13. The PoP device of claim 6 , wherein at least one of the first contact pad structure and the second contact pad structure comprises:

a contact pad;

a first metal pad in a topmost metallization layer directly contacting the contact pad without any intervening vias;

a second metal pad in a next topmost metallization layer; and

a dielectric layer interposed between the first metal pad and the second metal pad, the second metal pad being vertically aligned below the first metal pad, the first metal pad being interposed between the contact pad and the second metal pad, the first metal pad being electrically coupled to the second metal pad by a plurality of vias, the plurality of vias extending through the dielectric layer.

14. The PoP device of claim 6 , wherein at least one of the first contact pad structure and the second contact pad structure comprises:

a first metal pad in a topmost metallization layer;

a passivation layer overlying the first metal pad, the passivation layer having openings exposing the first metal pad; and

a contact pad overlying the passivation layer, the contact pad extending through the openings in the passivation layer to the first metal pad, wherein a stud is coupled to the contact pad.

15. The PoP device of claim 14 , further comprising:

a second metal pad in a next topmost metallization layer, the second metal pad being vertically aligned below the first metal pad, the first metal pad being interposed between the contact pad and the second metal pad, a dielectric layer being interposed between the first metal pad and the second metal pad, the first metal pad being electrically coupled to the second metal pad by a plurality of vias, the plurality of vias extending through the dielectric layer.

16. The method of claim 9 , wherein the first contact pad structure comprises:

a contact pad, wherein the first stud is coupled to the contact pad;

a first metal pad in a topmost metallization layer directly contacting the contact pad without any intervening vias; and

a second metal pad in a next topmost metallization layer, the second metal pad being vertically aligned below the first metal pad, the first metal pad being interposed between the contact pad and the second metal pad, the first metal pad being electrically coupled to the second metal pad by a plurality of vias.

17. The method of claim 9 , wherein the first contact pad structure comprises:

a first metal pad in a topmost metallization layer;

a passivation layer overlying the first metal pad, the passivation layer having openings exposing the first metal pad; and

a contact pad overlying the passivation layer, the contact pad extending through the openings in the passivation layer to the first metal pad, wherein the first stud is coupled to the contact pad.

18. The method of claim 17 , further comprising:

a second metal pad in a next topmost metallization layer, the second metal pad being vertically aligned below the first metal pad, the first metal pad being interposed between the contact pad and the second metal pad, the first metal pad being electrically coupled to the second metal pad by a plurality of vias.

19. The method of claim 9 , wherein the mounting the first stud comprises:

mounting a first stud portion on the first contact pad structure; and

mounting a second stud portion on the first stud portion.

20. The method of claim 9 , further comprising:

mounting a die to the second contact pad structure on the first side of the substrate; and

mounting the top package to the first contact pad structure on the first side of the substrate.