Light-source sensor integrated photoelectric conversion device
A photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each light-receiving element having an upper electrode layer, wherein a semiconductor material is different in the light-emitting element and the light-receiving element, the upper electrode layer both of the light-emitting element and the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening.
1. A photoelectric conversion device comprising:
a substrate including opaque interconnection layers;
an insulating film formed on the substrate, the insulating film including a plurality of openings which are separated apart in a substrate in-plane direction;
light-emitting elements respectively formed in some of the plurality of openings, each light-emitting element including a light-emitting layer formed of a semiconductor material and an upper electrode layer; and
light-receiving elements respectively formed in some of remaining openings of the plurality of openings, each light-receiving element including a light-receiving layer formed of a semiconductor material and an upper electrode layer,
wherein the semiconductor material of the light-emitting element is different from the semiconductor material of the light-receiving element, the upper electrode layer of the light-emitting element and the upper electrode layer of the light-receiving element are formed as common electrodes continuously in a same layer, and each interconnection layer is formed on a region outside a region specified by the respective openings and is formed at an in-plane distance from a position immediately below respective openings of the insulating film by in-plane distances of twice or more of a distance corresponding to a thickness of the insulating film.
2. The device of claim 1 , wherein at least one of the light-emitting layer and the light-receiving layer is formed to contain an organic semiconductor.
3. The device of claim 1 , wherein each of the light-emitting element and the light-receiving element further includes a charge injection layer under the upper electrode layer, and the charge injection layer of the light-emitting element and the charge injection layer of the light-receiving element are formed as common layers.
4. The device of claim 1 , wherein the light-receiving element includes an active layer of a bulk hetero-junction.
5. The device of claim 1 , wherein the openings for the light-emitting elements and the openings for the light-receiving elements are alternately laid out along one direction, and are continuously laid out in a direction perpendicular to the one direction.
6. The device of claim 1 , wherein an active matrix layer including the interconnections and thin-film transistors is formed on the substrate.