Semiconductor device
A semiconductor device includes a semiconductor substrate, and a field plate portion formed on a front surface of a non-cell region. The non-cell region includes a plurality of FLR layers. The FLR layers extend in a first direction along a circumference of the cell region. The field plate portion includes: an insulating film; a plurality of first conducting layers each disposed along a corresponding FLR layer; and a plurality of second conducting layers. The second conducting layers are disposed on part of their corresponding FLR layers in an intermittent manner along the corresponding FLR layers. Each of the second conducting layers includes a front surface portion, a first contact portion, and a second contact portion. Any of the first contact portions and the second contact portions are not provided at positions adjacent to the first contact portion and the second contact portion in the second direction.
1. A semiconductor device comprising:
a semiconductor substrate having a cell region where a semiconductor element is formed, and a non-cell region provided around the cell region; and
a field plate portion formed on a front surface of the non-cell region, wherein:
the non-cell region includes:
a substrate layer having a first-conductivity-type; and
a plurality of field limiting ring layers formed on a front surface of the substrate layer, extending in a first direction along a circumference of the cell region so as to surround the cell region, disposed at intervals in a second direction perpendicular to the first direction, and each having a second-conductivity-type,
the field plate portion includes:
an insulating film formed on a front surface of the semiconductor substrate;
a plurality of first conducting layers each formed in the insulating film for a corresponding field limiting ring layer so as to be disposed along the corresponding field limiting ring layer when the semiconductor substrate is viewed in a plane manner; and
a plurality of second conducting layers formed so as to respectively correspond to at least two field limiting ring layers adjacent to each other, the second conducting lavers respectively disposed on part of corresponding field limiting ring layers in an intermittent manner along the corresponding field limiting ring layers when the semiconductor substrate is viewed in a plane manner and each including a front surface portion, a first contact portion and a second contact portion, the front surface portion formed on a front surface of the insulating film, the first contact portion extending from the front surface portion and penetrating through the insulating film so as to be electrically connected to the first conducting layer, and the second contact portion extending from the front surface portion and penetrating through the insulating film so as to be electrically connected to the field limiting ring layer,
any of the first contact portions of the second conducting layers are not provided at a position adjacent to the first contact portion in the second direction, and
any of the second contact portions of the second conducting layers are not provided at a position adjacent to the second contact portion in the second direction.
2. The semiconductor device according to claim 1 , wherein:
the field plate portion further includes a third conducting layer disposed along a corresponding field limiting ring layer where no second conducting layer is formed when the semiconductor substrate is viewed in a plane manner, the third conducting layer including a front surface portion and a third contact portion, the front surface portion formed on the front surface of the insulating film, and the third contact portion extending from the front surface portion and penetrating through the insulating film so as to be electrically connected to the corresponding field limiting ring layer, and
the third conducting layer is provided closer to a circumference side of the semiconductor substrate than the plurality of second conducting layers when the semiconductor substrate is viewed in a plane manner.
3. The semiconductor device according to claim 1 , wherein:
an end part of the second conducting layer in the first direction is provided in an area except for corners of the semiconductor substrate viewed in a plane manner.