Lidded integrated circuit package
A lid comprising a heat conductive substrate and a native silicon oxide layer connected to said substrate by at least one intermediate layer; a lidded integrated circuit package; and a method of providing a heat path through an integrated circuit package comprising providing a substrate with an exterior layer of native silicon oxide and interfacing the layer of native silicon oxide with a layer of thermal interface material.
1. A lidded integrated circuit (IC) package comprising:
a lid having a heat conductive substrate;
a native silicon oxide layer connected to said heat conductive substrate by at least one intermediate layer; and
a crystallized amorphous silicon film layer disposed between said heat conductive substrate and said native silicon oxide layer.
2. The lidded integrated circuit (IC) package of claim 1 , wherein said lid further comprises:
a nickel layer disposed between said heat conductive substrate and said native silicon oxide layer.
3. The lidded integrated circuit (IC) package of claim 1 , further comprising:
a semiconductor die having a top surface and a bottom surface; and
a layer of thermal interface material attached to said top surface of said semiconductor die and to said native silicon oxide layer.
4. The lidded integrated circuit (IC) package of claim 3 , wherein said lid comprises a central body portion which comprises said native silicon oxide layer, and a peripheral flange portion; and
further comprising:
an electrical connection substrate, wherein said peripheral flange is connected to said electrical connection substrate.
5. The lidded integrated circuit (IC) package of claim 3 , wherein said semiconductor die is mounted on said electrical connection substrate.
6. The lidded integrated circuit (IC) package of claim 3 , wherein said thermal interface material comprises at least one of silicone and epoxy.
7. The lidded integrated circuit (IC) package of claim 1 , wherein said lid comprises:
a central body portion and a peripheral flange portion, and
further comprising:
a semiconductor die having a top surface and a bottom surface;
a layer of thermal interface material attached to said top surface of said semiconductor die and to said native silicon oxide layer; and
an electrical connection substrate, wherein said peripheral flange of said lid is connected to said electrical connection substrate.
8. The lidded integrated circuit (IC) package of claim 7 , further comprising:
a PC board operatively connected to said electrical connection substrate; and
a heatsink mounted on and which is operatively connected to said lid.
9. A lidded integrated circuit (IC) package comprising:
a lid having a copper substrate;
a nickel layer deposited on said copper substrate;
a crystallized amorphous silicon layer deposited on said nickel layer; and
a native silicon oxide layer connected to said copper substrate by at least one intermediate layer.
10. The lidded integrated circuit (IC) package of claim 9 , wherein said native silicon oxide layer is formed on said crystallized amorphous silicon layer.