Integrated inductor and integrated inductor fabricating method
The present invention provides an integrated inductor and an integrated inductor fabricating method. The integrated inductor comprises: a semiconductor substrate, an inductor, and a redistribution layer (RDL). The inductor is formed above the semiconductor substrate. The RDL is formed above the inductor and has a specific pattern to form a patterned ground shield (PGS). The integrated inductor fabricating method comprises: forming a semiconductor substrate; forming an inductor above the semiconductor substrate; and forming redistribution layer (RDL) having a specific pattern above the inductor to form a patterned ground shield (PGS).
1. An integrated inductor, comprising:
a semiconductor substrate;
an inductor, formed above the semiconductor substrate; and
only one redistribution layer (RDL) of metal, formed above the inductor with a specific pattern to form a patterned ground shield (PGS) that is grounded, wherein the RDL of metal comprises a plurality of metal strips, and wherein the semiconductor substrate, the inductor, and the plurality of metal strips are within a semiconductor chip, and each of the metal strips has an exposed surface from the semiconductor chip.
2. The integrated inductor of claim 1 , wherein material of the RDL of metal is aluminum.
3. The integrated inductor of claim 1 , applied to an integrated passive device (IPD) in a 3D IC.
4. The integrated inductor of claim 1 , wherein there is no PGS between the inductor and the semiconductor substrate.
5. The integrated inductor of claim 1 , applied to Flip Chip.
6. The integrated inductor of claim 1 , wherein the RDL of metal is substantially orthogonal to the inductor above the inductor.
7. An integrated inductor fabricating method, comprising:
forming a semiconductor substrate;
forming an inductor above the semiconductor substrate; and
forming only one redistribution layer (RDL) of metal above the inductor with a specific pattern to form a patterned ground shield (PGS) that is grounded, wherein the RDL of metal comprises a plurality of metal strips, and wherein the semiconductor substrate, the inductor, and the plurality of metal strips are within a semiconductor chip, and each of the metal strips has an exposed surface from the semiconductor chip.
8. The integrated inductor fabricating method of claim 7 , wherein material of the RDL of metal is aluminum.
9. The integrated inductor fabricating method of claim 7 , wherein the RDL of metal is substantially orthogonal to the inductor above the inductor.