Semiconductor device and bonding material for semiconductor device
In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110 , the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120 . In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.
1. A semiconductor device, comprising: a substrate; and a semiconductor member stacked on the substrate, wherein the semiconductor member and the substrate are bonded together by means of a semiconductor device bonding material of which main component is zinc, a coating layer to prevent diffusion of the semiconductor device bonding material is provided on at least one of the surface of the substrate and the surface of the semiconductor member, and the coating layer is configured such that a barrier layer composed of nitride, carbide, or carbonitride and a protective layer composed of a noble metal are stacked.
2. The semiconductor device of claim 1 , wherein the nitride, the carbide, or the carbonitride composing the barrier layer is selected so as to have free energy smaller than that of a material composing an insulating layer provided in the substrate.
3. The semiconductor device of claim 1 , wherein a material composing the barrier layer is TiN, a material composing the protective layer is Au, Ag, Cu, Ni, or Pd, and a material composing an insulating layer included in the substrate is Si 3 N 4 , Al 2 O 3 , or AlN.
4. The semiconductor device of claim 1 , wherein the zinc in the semiconductor device bonding material has a purity of 90 wt % or higher.
5. The semiconductor device of claim 4 , wherein the zinc in the semiconductor device bonding material has a purity of 99.9999 wt % or higher.
6. The semiconductor device of claim 1 , wherein the barrier layer has a thickness in the range from 100 nm to 2000 nm, and the protective layer has a thickness in the range from 20 nm to 500 nm.
7. The semiconductor device of claim 1 , wherein the semiconductor device bonding material contains an additive element.
8. The semiconductor device of claim 7 , wherein the additive element includes at least one element selected from the group consisting of Ca, Mn, Ti, Cr, Ni, V, and Nb.