Contact structure
View Patent ↗There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among different cells if the interlayer dielectric film thickness is nonuniform across the cell or among different cells. A first conducting film and a dielectric film are deposited on the first substrate. Openings are formed in the dielectric film. A second conducting film covers the dielectric film left and the openings. The conducting spacers electrically connect the second conducting film over the first substrate with a third conducting film on the second substrate. The cell gap depends only on the size of the spacers, which maintain the cell gap.
1. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region and a first internal conducting line;
forming a first insulating film over the gate electrode;
forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor and a second internal conducting line;
forming a second insulating film over the source electrode and the drain electrode of the thin film transistor and the second internal conducting line;
forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor and a conductive layer in an extractor terminal;
disposing a second substrate opposed to the first substrate, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the first internal conducting line;
wherein the first internal conducting line is electrically connected to the counter electrode; and
wherein the second internal conducting line is electrically connected to the counter electrode.
2. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region and a first internal conducting line;
forming a first insulating film over the gate electrode;
forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor and a second internal conducting line;
forming a second insulating film over the source electrode and the drain electrode of the thin film transistor and the second internal conducting line;
forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor, a conductive layer in an extractor terminal and a conducting pad in a common contact portion;
disposing a second substrate opposed to the first substrate, the second substrate being provided with a counter electrode covering the pixel region,
wherein the conductive layer is electrically connected to the first internal conducting line;
wherein the first internal conducting line is electrically connected to the counter electrode through the conducting pad; and
wherein the second internal conducting line is electrically connected to the counter electrode.
3. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region and an internal conducting line;
forming a first insulating film over the gate electrode;
forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor; forming a second insulating film over the source electrode and the drain electrode of the thin film transistor; forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor and a conductive layer in an extractor terminal;
forming a scanning line driver circuit over the first substrate;
disposing a second substrate opposed to the first substrate with the pixel region and the scanning line driver circuit interposed therebetween, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the internal conducting line; and
wherein the internal conducting line is electrically connected to the counter electrode.
4. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region and an internal conducting line;
forming a first insulating film over the gate electrode;
forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor; forming a second insulating film over the source electrode and the drain electrode of the thin film transistor; forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor, a conductive layer in an extractor terminal and a conducting pad in a common contact portion;
forming a scanning line driver circuit over the first substrate;
disposing a second substrate opposed to the first substrate with the pixel region and the scanning line driver circuit interposed therebetween, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the internal conducting line; and
wherein the internal conducting line is electrically connected to the counter electrode through the conducting pad.
5. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region and a first internal conducting line;
forming a second internal conducting line over the first substrate;
forming a source electrode and a drain electrode of the thin film transistor over the first substrate;
forming an insulating film over the source electrode and the drain electrode of the thin film transistor;
forming a second conductive film over the insulating film;
patterning the second conductive film to form a pixel electrode electrically connected to the thin film transistor and a conductive layer in an extractor terminal;
forming a scanning line driver circuit over the first substrate wherein the scanning line driver circuit is located between the pixel region and the second internal conducting line;
disposing a second substrate opposed to the first substrate with the pixel region and the scanning line driver circuit interposed therebetween, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the first internal conducting line;
wherein the first internal conducting line is electrically connected to the counter electrode; and
wherein the second internal conducting line is electrically connected to the counter electrode.
6. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region; forming a first insulating film over the gate electrode; forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor and an internal conducting line;
forming a second insulating film over the source electrode and the drain electrode of the thin film transistor and the internal conducting line;
forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor and a conductive layer in an extractor terminal;
forming a scanning line driver circuit over the first substrate wherein the scanning line driver circuit is located between the pixel region and the internal conducting line;
disposing a second substrate opposed to the first substrate with the pixel region and the scanning line driver circuit interposed therebetween, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the internal conducting line;
wherein the internal conducting line is electrically connected to the counter electrode.
7. The method of manufacturing an active matrix display device according to any one of claims 1 to 6 , wherein the thin film transistor is a top-gate thin film transistor.
8. The method of manufacturing an active matrix display device according to any one of claims 1 to 6 , wherein the thin film transistor is a bottom-gate thin film transistor.
9. The method of manufacturing an active matrix display device according to any one of claims 1 to 6 , wherein the pixel electrode is made of a transparent film.
10. The method of manufacturing an active matrix display device according to any one of claims 1 to 6 , further comprising the step of forming a signal line driver circuit over the first substrate.
11. The method of manufacturing an active matrix display device according to claim 10 , wherein the signal line driver circuit is interposed between the first substrate and the second substrate.
12. The method of manufacturing an active matrix display device according to claim 5 , wherein the source electrode and the drain electrode of the thin film transistor and the second internal conducting line are formed by patterning a same conductive film.
13. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region and a first internal conducting line;
forming a first insulating film over the gate electrode;
forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor and a second internal conducting line;
forming a second insulating film over the source electrode and the drain electrode of the thin film transistor and the second internal conducting line;
forming a contact hole in the second insulating film;
forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor and a conductive layer in an extractor terminal;
disposing a second substrate opposed to the first substrate, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the first internal conducting line through the contact hole;
wherein the first internal conducting line is electrically connected to the counter electrode; and
wherein the second internal conducting line is electrically connected to the counter electrode.
14. A method of manufacturing an active matrix display device comprising the steps of:
forming a first conductive film over a first substrate;
patterning the first conductive film to form a gate electrode of a thin film transistor in a pixel region;
forming a first insulating film over the gate electrode;
forming a second conductive film over the first insulating film;
patterning the second conductive film to form a source electrode and a drain electrode of the thin film transistor and an internal conducting line;
forming a second insulating film over the source electrode and the drain electrode of the thin film transistor and the internal conducting line;
forming a contact hole in the second insulating film in an extractor terminal;
forming a third conductive film over the second insulating film;
patterning the third conductive film to form a pixel electrode electrically connected to the thin film transistor and a conductive layer in the extractor terminal;
forming a scanning line driver circuit over the first substrate wherein the scanning line driver circuit is located between the pixel region and the internal conducting line;
disposing a second substrate opposed to the first substrate with the pixel region and the scanning line driver circuit interposed therebetween, the second substrate being provided with a counter electrode covering the pixel region;
wherein the conductive layer is electrically connected to the internal conducting line through the contact hole;
wherein the internal conducting line is electrically connected to the counter electrode.
15. The method of manufacturing an active matrix display device according to claim 13 or claim 14 , wherein the thin film transistor is a top-gate thin film transistor.
16. The method of manufacturing an active matrix display device according to claim 13 or claim 14 , wherein the thin film transistor is a bottom-gate thin film transistor.
17. The method of manufacturing an active matrix display device according to claim 13 or claim 14 , wherein the pixel electrode is made of a transparent film.
18. The method of manufacturing an active matrix display device according to claim 13 or claim 14 , further comprising the step of forming a signal line driver circuit over the first substrate.
19. The method of manufacturing an active matrix display device according to claim 18 , wherein the signal line driver circuit is interposed between the first substrate and the second substrate.