Corner layout for high voltage semiconductor devices
A corner layout for a semiconductor device that maximizes the breakdown voltage is disclosed. The device includes first and second subsets of the striped cell arrays. The ends of each striped cell in the first array is spaced a uniform distance from the nearest termination device structure. In the second subset, the ends of striped cells proximate a corner of the active cell region are configured to maximize breakdown voltage by spacing the ends of each striped cell a non-uniform distance from the nearest termination device structure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
1. A semiconductor device comprising:
a doped layer;
an active cell region formed in the doped layer, the active cell region having a plurality of active cell device structures arranged in striped cell arrays, wherein each striped cell array having a first end and a second end; and
a termination region having a plurality of termination device structures formed in the doped layer surrounding the active cell region,
wherein a first subset of the striped cell arrays are configured to maximize a breakdown voltage of the semiconductor device by having the first and second ends of each striped cell array in the first subset spaced a uniform distance from a nearest termination device structure; and
wherein a second subset of the striped cell arrays proximate to a corner region of the active cell region are configured to maximize the breakdown voltage by spacing the first and second ends of each striped cell array in the second subset a non-uniform distance from the nearest termination device structure, wherein the second subset of the striped cell arrays include arcuate end portions in the shape of quarter circles.
2. The device of claim 1 , wherein the first and second ends of each of the striped cell arrays in the second subset are spaced a uniform distance from a nearest striped cell array in the first subset.
3. The device of claim 1 , wherein the first and second ends of an outermost striped cell array of the second subset are spaced further away from the nearest termination device structure than the first and second ends of the striped cell arrays in the first subset.
4. The device of claim 1 , wherein the termination device structures proximate the corner region include arcuate portions that are concentric with the arcuate end portions of the second subset of the striped cell arrays.
5. The device of claim 1 , wherein the termination device structures are arranged in concentric ring arrays.
6. The device of claim 5 , wherein an innermost ring array of termination device structures has a plurality of spurs extending inward towards the active cell region and wherein a distance between each of the spurs and a nearby striped cell array in the second subset is configured to maximize the breakdown voltage of the device.
7. A method of forming a semiconductor device, comprising:
forming a doped layer;
forming an active cell region in the doped layer, the active cell region having a plurality of active cell device structures arranged as striped cell arrays, each striped cell array having a first end and a second end; and
forming a termination region having a plurality of termination device structures formed in the doped layer surrounding the active cell region,
wherein a first subset of the striped cell arrays are configured to maximize a breakdown voltage of the semiconductor device by having the first and second ends of each striped cell array spaced a uniform distance from a nearest termination device structure; and
wherein a second subset of the striped cell arrays proximate to a corner region of the active cell region are configured to maximize the breakdown voltage by spacing the first and second ends of each striped cell array in the second subset a non-uniform distance from the nearest termination device structure, wherein the striped cell arrays of the second subset include arcuate end portions configured as concentric quarter circles.
8. The method of claim 7 , wherein the first and second ends of each of the striped cell array in the second subset include are spaced a uniform distance from a nearest striped cell array in the first subset.
9. The method of claim 7 , wherein the first and second ends of an outermost striped cell array of the second subset are formed further away from the nearest termination device structure than the first and second ends of the other striped cell arrays in the first subset.
10. The method of claim 7 , wherein the termination device structures proximate the corner region include arcuate portions that are concentric with the arcuate end portions of the striped cell arrays of the second subset.
11. The method of claim 7 , wherein the termination device structures are arranged in concentric ring arrays.
12. The method of claim 11 , wherein an innermost ring array of termination device structures has a plurality of spurs extending inward towards the active cell region, wherein a distance between each of the spurs and a nearby striped cell array in the second subset is configured to maximize the breakdown voltage of the device.