IP Library Granted Patent US 9,230,993
Granted Patent B2
US 9,230,993 · App. 14/449,889 · Granted Jan 5, 2016

Display apparatus and manufacturing method of the same

Inventors: Jun Tanaka (Kawasaki, JP); Nobuya Seko (Kawasaki, JP); Kenichi Hayashi (Kawasaki, JP)
Assignee: NLT TECHNOLOGIES, LTD.
H01L27/1222H01L27/124H01L27/127H01L29/78633
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Quick Facts
Patent No.
US 9,230,993
App. No.
14/449,889
Granted
Jan 5, 2016
Kind
B2
Abstract

Provided are a display apparatus and a manufacturing method of the same. The display apparatus includes: a counter substrate, and an active matrix substrate including a pixel area. The active matrix substrate includes, in a non-transmissive region of each pixel, a transparent substrate, a polycrystalline silicon film, a gate insulating film, a gate electrode, an interlayer insulating film, and a drain layer including patterned conductive films, and includes, in a transparent region of each pixel, the transparent substrate, the gate insulating film and the interlayer insulating film. The interlayer insulating film includes zones where the interlayer insulating film is thinner than a part of the interlayer insulating film at the middle of each transmissive region. The zones are each located so as to extend between the neighboring patterned conductive films and are further located so as not to overlap with the transmissive regions and regions laid over LDD portions of the polycrystalline silicon film.

Claims (43)

1. A display apparatus comprising:

a counter substrate including a light shielding layer defining transmissive regions where light passes through and non-transmissive regions where light does not pass through; and

an active matrix substrate including a pixel area where pixels are arranged in matrix, each of the pixels including the transmissive region and the non-transmissive region both defined by the light shielding layer,

wherein the active matrix substrate includes, in the non-transmissive region of each of the pixels,

a transparent substrate,

a polycrystalline silicon film formed on the transparent substrate, the polycrystalline silicon film including a channel portion, a lightly doped drain (LDD) portion, and source and drain portions,

a gate insulating film formed on the polycrystalline silicon film,

a gate electrode formed on the gate insulating film and covering the channel portion,

an interlayer insulating film formed on the gate electrode, and

a drain layer formed on the interlayer insulating film and including patterned conductive films at least partially covering the source and drain portions respectively,

the active matrix substrate includes, in the transparent region of each of the pixels,

the transparent substrate, and

the gate insulating film and the interlayer insulating film both formed on the transparent substrate, and

the interlayer insulating film includes zones where the interlayer insulating film is thinner than a part of the interlayer insulating film at a middle of each of the transmissive regions, the zones each being located so as to extend between the patterned conductive films neighboring to each other, the zones further being located so as not to overlap with the transmissive regions and regions laid over the LDD portions.

2. The display apparatus of claim 1 ,

wherein each of the zones includes a groove being not closed in a vicinity of the patterned conductive films of the drain layer.

3. The display apparatus of claim 1 ,

wherein each of the zones includes a groove continuing between opposite ends of the pixel area, in a vicinity of the patterned conductive films of the drain layer.

4. The display apparatus of claim 1 ,

wherein each of the zones has a same width over the non-transmissive regions.

5. The display apparatus of claim 1 ,

wherein each of the zones has a width being 0.1 μm or more and being less than a gap between the patterned conductive films separately formed in the drain layer.

6. The display apparatus of claim 1 ,

wherein each of the zones has a difference in level at a boundary thereof so as to form the each of the zones into a tapered shape in a depth direction at a forward taper angle less than 90 degrees.

7. The display apparatus of claim 1 ,

wherein each of the zones has a difference in level at a boundary thereof, the difference being 170 nm or more.

8. The display apparatus of claim 1 ,

wherein the drain layer includes a patterned island and a wire for transmitting signals to the pixels as the patterned conductive films, the patterned island and the wire at least partially covering the source and drain portions respectively, and

the zones of the interlayer insulating film are located so as to extend between the patterned island and the wire neighboring to each other and to be put at one side or both sides of each of the wires.

9. A display apparatus comprising:

a counter substrate including a light shielding layer defining transmissive regions where light passes through and non-transmissive regions where light does not pass through; and

an active matrix substrate including a pixel area where pixels are arranged in matrix, each of the pixels including the transmissive region and the non-transmissive region both defined by the light shielding layer,

wherein the active matrix substrate includes, in the non-transmissive region of each of the pixels,

a transparent substrate,

a polycrystalline silicon film formed on the transparent substrate, the polycrystalline silicon film including a channel portion, a lightly doped drain (LDD) portion, and source and drain portions,

a gate insulating film formed on the polycrystalline silicon film,

a gate electrode formed on the gate insulating film and covering the channel portion,

an interlayer insulating film formed on the gate electrode, and

a drain layer formed on the interlayer insulating film and including patterned conductive films at least partially covering the source and drain portions respectively,

the active matrix substrate includes, in the transparent region of each of the pixels,

the transparent substrate, and

the gate insulating film and the interlayer insulating film both formed on the transparent substrate, and

the interlayer insulating film includes zones where the interlayer insulating film is thinner than a part of the interlayer insulating film at a middle of each of the transmissive regions, the zones being located in a first area and a second area, the first area being located so as to extend between the patterned conductive films neighboring to each other and not to overlap with regions laid over the LDD portions, the second area being peripheries of the transmissive regions, each of the zones in the second area being equal or less in width than the each of the zones in the first area.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2014
From: TANAKA, JUN; SEKO, NOBUYA; HAYASHI, KENICHI
To: NLT TECHNOLOGIES, LTD.
Reel/Frame 033463/0157 →
Priority Claims (2)
JP 2013-163417 · Aug 6, 2013 · national
JP 2014-097593 · May 9, 2014 · national
Continuity (1)
Related Publication 20150041818A1 · Feb 12, 2015