Driver circuit
View Patent ↗An object is to prevent malfunction of a power device. In a semiconductor device for driving a power device for power supply, a buffer circuit and a level-shift circuit are configured by transistors having the same conductivity type. Furthermore, a capacitor is provided in the level-shift circuit, and a signal to be boosted is supplied to the capacitor and is boosted using capacitive coupling of the capacitor. Furthermore, a structure can be employed in which the signal is boosted in such a manner that, in the level-shift circuit, a capacitor is provided between a wiring for supplying a low power source potential and a wiring for supplying a potential to boost the signal so that a power transistor can be driven.
1. A semiconductor device comprising:
a first buffer circuit that converts a first signal into a second signal;
a level-shift circuit that converts the second signal into a third signal;
a second buffer circuit that converts the third signal into a fourth signal; and
a third buffer circuit that outputs a first potential or a second potential in accordance with the fourth signal,
the third buffer circuit comprising:
a first transistor;
a second transistor; and
an output terminal,
wherein the fourth signal is supplied to a gate of the first transistor, and an inverted signal of the fourth signal is supplied to a gate of the second transistor,
wherein a first terminal of the first transistor is electrically connected to a wiring for supplying the first potential, and a first terminal of the second transistor is electrically connected to a wiring for supplying the second potential,
wherein a second terminal of the first transistor and a second terminal of the second transistor are electrically connected to the output terminal,
wherein the level-shift circuit, the first buffer circuit, the second buffer circuit, and the third buffer circuit comprise transistors having the same conductivity type, and
wherein the second signal is supplied to a capacitor in the level-shift circuit and converted into the third signal by capacitive coupling.
2. The semiconductor device according to claim 1 ,
wherein a semiconductor layer of each of the transistors comprises an oxide semiconductor.
3. The semiconductor device according to claim 1 , wherein a low power source potential supplied to the first buffer circuit is lower than a low power source potential supplied to the second buffer circuit and a low power source potential supplied to the third buffer circuit.
4. The semiconductor device according to claim 1 ,
wherein a high power source potential supplied to the first buffer circuit is different from a high power source potential supplied to the second buffer circuit and a high power source potential supplied to the third buffer circuit.
5. A semiconductor device comprising:
a first buffer circuit that converts a first signal into a second signal;
a level-shift circuit that converts the second signal into a third signal;
the level-shift circuit comprising:
a first transistor;
a second transistor;
a first capacitor; and
a second capacitor,
a second buffer circuit that converts the third signal into a fourth signal;
the second buffer circuit comprising:
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor,
a first output terminal,
a second output terminal, and
a third buffer circuit that outputs a first potential or a second potential in accordance with the fourth signal,
the third buffer circuit comprising:
a seventh transistor;
an eighth transistor; and
a third output terminal,
wherein a first terminal of the first transistor and a first terminal of the second transistor are electrically connected to a wiring for supplying the second potential,
wherein one of the electrodes of the first capacitor is electrically connected to a second terminal of the first transistor, a gate of the second transistor, and the second buffer circuit,
wherein one of the electrodes of the second capacitor is electrically connected to a second terminal of the second transistor, a gate of the first transistor, and the second buffer circuit,
wherein the second signal is supplied to the other electrode of the first capacitor, and an inverted signal of the second signal is supplied to the other electrode of the second capacitor,
wherein the level-shift circuit, the first buffer circuit, the second buffer circuit, and the third buffer circuit comprise transistors having the same conductivity type,
wherein the third signal is supplied to a gate of the third transistor and a gate of the sixth transistor and, an inverted signal of the third signal is supplied to a gate of the fourth transistor and a gate of the fifth transistor,
wherein a first terminal of the third transistor and a first terminal of the fourth transistor are electrically connected to a wiring for supplying the first potential, and a first terminal of the fifth transistor and a first terminal of the sixth transistor are electrically connected to a wiring for supplying the second potential,
wherein a second terminal of the third transistor and a second terminal of the fifth transistor are electrically connected to the first output terminal,
wherein a second terminal of the fourth transistor and a second terminal of the sixth transistor are electrically connected to the second output terminal,
wherein the first output terminal outputs the fourth signal and the second output terminal outputs an inverted signal of the fourth signal,
wherein the fourth signal is supplied to a gate of the seventh transistor, and an inverted signal of the fourth signal is supplied to a gate of the eighth transistor,
wherein a first terminal of the seventh transistor is electrically connected to a wiring for supplying the first potential, and a first terminal of the eighth transistor is electrically connected to a wiring for supplying the second potential, and
wherein a second terminal of the seventh transistor and a second terminal of the eighth transistor are electrically connected to the third output terminal.
6. The semiconductor device according to claim 5 ,
wherein a semiconductor layer of each of the transistors comprises an oxide semiconductor.
7. The semiconductor device according to claim 5 ,
wherein a low power source potential supplied to the first buffer circuit is lower than a low power source potential supplied to the second buffer circuit and a low power source potential supplied to the third buffer circuit.
8. The semiconductor device according to claim 5 ,
wherein a high power source potential supplied to the first buffer circuit is different from a high power source potential supplied to the second buffer circuit and a high power source potential supplied to the third buffer circuit.
9. A semiconductor device comprising:
a first buffer circuit that converts a first signal into a second signal;
a level-shift circuit that converts the second signal into a third signal;
the level-shift circuit comprising:
a first transistor;
a second transistor;
a first capacitor; and
a second capacitor,
a second buffer circuit that converts the third signal into a fourth signal; and
a third buffer circuit that outputs a first potential or a second potential in accordance with the fourth signal,
the third buffer circuit comprising:
a third transistor;
a fourth transistor; and
an output terminal,
wherein a first terminal of the first transistor and a first terminal of the second transistor are electrically connected to a wiring for supplying the second potential,
wherein one of the electrodes of the first capacitor is electrically connected to a second terminal of the first transistor, a gate of the second transistor, and the second buffer circuit,
wherein one of the electrodes of the second capacitor is electrically connected to a second terminal of the second transistor, a gate of the first transistor, and the second buffer circuit,
wherein the second signal is supplied to the other electrode of the first capacitor, and an inverted signal of the second signal is supplied to the other electrode of the second capacitor,
wherein the fourth signal is supplied to a gate of the third transistor, and an inverted signal of the fourth signal is supplied to a gate of the fourth transistor,
wherein a first terminal of the third transistor is electrically connected to a wiring for supplying the first potential, and a first terminal of the fourth transistor is electrically connected to a wiring for supplying the second potential,
wherein a second terminal of the third transistor and a second terminal of the fourth transistor are electrically connected to the output terminal, and
wherein the level-shift circuit, the first buffer circuit, the second buffer circuit, and the third buffer circuit comprise transistors having the same conductivity type.
10. The semiconductor device according to claim 9 ,
wherein a semiconductor layer of each of the transistors comprises an oxide semiconductor.
11. The semiconductor device according to claim 9 ,
wherein a low power source potential supplied to the first buffer circuit is lower than a low power source potential supplied to the second buffer circuit and a low power source potential supplied to the third buffer circuit.
12. The semiconductor device according to claim 9 ,
wherein a high power source potential supplied to the first buffer circuit is different from a high power source potential supplied to the second buffer circuit and a high power source potential supplied to the third buffer circuit.