Image sensor device with light guiding structure
An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.
1. An image sensor device, comprising:
a semiconductor substrate having an array region and a periphery region;
a light sensing region in the array region of the semiconductor substrate;
a dielectric structure over the array region and the periphery region, wherein the dielectric structure has a substantially planar top surface;
a recess in the dielectric structure substantially aligned with the light sensing region;
a filter in the recess; and
a light blocking grid in the dielectric structure surrounding a portion of the filter, wherein a bottom of the recess is below a bottom of the light blocking grid.
2. The image sensor device as claimed in claim 1 , wherein the light blocking grid is a metal grid.
3. The image sensor device as claimed in claim 1 , further comprising a light blocking element in the dielectric structure over the periphery region of the semiconductor substrate.
4. The image sensor device as claimed in claim 3 , wherein the light blocking element is over a black level correction region in the semiconductor substrate.
5. The image sensor device as claimed in claim 3 , wherein bottoms of the light blocking element and the light blocking grid are coplanar with each other, and thicknesses of the light blocking element and the light blocking grid are substantially the same.
6. The image sensor device as claimed in claim 3 , wherein materials of the light blocking element and the light blocking grid are the same.
7. The image sensor device as claimed in claim 3 , further comprising a grounding element in the dielectric structure and electrically connected to the semiconductor substrate.
8. The image sensor device as claimed in claim 7 , wherein the grounding element is electrically connected to the light blocking element.
9. The image sensor device as claimed in claim 7 , wherein materials of the grounding element and the light blocking grid are the same.
10. The image sensor device as claimed in claim 1 , further comprising an etch stop layer between the recess and the semiconductor substrate.
11. An image sensor device, comprising:
a semiconductor substrate;
a light sensing region in the semiconductor substrate;
a black level correction region in the semiconductor substrate;
a dielectric structure over the light sensing region and the black level correction region, wherein the dielectric structure has a substantially planar top surface;
a recess in the dielectric structure and substantially aligned with the light sensing region;
a filter in the recess; and
a light blocking grid in the dielectric structure and surrounding a portion of the filter, wherein a bottom of the recess is below a bottom of the light blocking grid.
12. The image sensor device as claimed in claim 11 , further comprising a light blocking element in the dielectric structure over the black level correction region.
13. The image sensor device as claimed in claim 12 , wherein materials of the light blocking element and the light blocking grid are the same.
14. The image sensor device as claimed in claim 13 , wherein the light blocking grid is a metal grid.
15. The image sensor device as claimed in claim 11 , further comprising a grounding element in the dielectric structure and electrically connected to the semiconductor substrate.
16. A method for forming an image sensor device, comprising:
providing a semiconductor substrate, wherein a light sensing region is formed in the semiconductor substrate;
forming a first dielectric layer over the semiconductor substrate;
forming a light blocking grid over the first dielectric layer, wherein the light blocking grid surrounds an opening, and the opening is substantially aligned with the light sensing region;
forming a light blocking element over the first dielectric layer;
forming a second dielectric layer over the light blocking grid and the light blocking element, wherein the second dielectric layer has a substantially planar top surface;
forming a recess in the second dielectric layer such that a bottom of the recess is below a bottom of the light blocking grid; and
forming a filter in the recess.
17. The method for forming an image sensor device as claimed in claim 16 , wherein the recess extends into the first dielectric layer.
18. The method for forming an image sensor device as claimed in claim 16 , wherein the light blocking grid and the light blocking element are formed simultaneously.
19. The method for forming an image sensor device as claimed in claim 16 , wherein the formation of the second dielectric layer comprises:
depositing the second dielectric layer over the light blocking grid and the light blocking element; and
planarizing the second dielectric layer to provide the second dielectric layer with the substantially planar top surface.
20. The method for forming an image sensor device as claimed in claim 16 , further comprising forming a grounding element between the light blocking element and the semiconductor substrate.