Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors
A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.
1. A chemical-mechanical polishing (CMP) composition, comprising:
inorganic particles, organic particles, or a mixture or composite thereof,
an N-heterocyclic compound as corrosion inhibitor,
a further corrosion inhibitor, which is an adduct of an amine and a carboxylic acid comprising an amide moiety, in a concentration of from 0.01 to 5 wt %,
an oxidizing agent,
a complexing agent,
and an aqueous medium,
wherein the CMP composition has a pH of from 3 to less than 7.
2. The CMP composition according to claim 1 , wherein the N-heterocyclic compound is an imidazole, pyrazole, triazole, tetrazole, or a derivative thereof.
3. The CMP composition according to claim 2 , wherein the N-heterocyclic compound is a triazole or a derivative thereof.
4. The CMP composition according to claim 1 , wherein the amine is a trialkanolamine.
5. The CMP composition according to claim 1 , wherein the carboxylic acid comprising an amide moiety is an unsaturated monocarboxylic acid comprising one amide moiety.
6. The CMP composition according to claim 1 , wherein the particles are silica particles.
7. The CMP composition according to claim 1 , wherein the oxidizing agent is a peroxo compound.
8. The CMP composition according to claim 1 , wherein the complexing agent is a carboxylic acid having at least two COOH groups, N-containing carboxylic acid, N-containing sulfonic acid, N-containing sulfuric acid, N-containing phosphonic acid, N-containing phosphoric acid, or a salt thereof.
9. The CMP composition according to claim 1 , comprising:
silica particles, in a concentration of from 0.01 to 2 wt. %,
a triazole, or its derivative as corrosion inhibitor, in a concentration of from 0.005 to 1 wt. %,
a further corrosion inhibitor which is an adduct of a trialkanolamine and an unsaturated carboxylic acid comprising at least one amide moiety,
a peroxide or persulfate as oxidizing agent, in a concentration of from 0.05 to 10 wt. %,
a complexing agent selected from the group consisting of a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, N-containing sulfonic acid, N-containing sulfuric acid, N-containing phosphonic acid, N-containing phosphoric acid, or a salt thereof, in a concentration of 0.01 to 5 wt. %, and
an aqueous medium.
10. A process of manufacturing a semiconductor device, the process comprising chemical-mechanical polishing a metal-containing substrate in the presence of the CMP composition of claim 1 .
11. A process of polishing a substrate, the process comprising polishing the substrate with the CMP composition of claim 1 , wherein the substrate is suitable for an application in the semiconductor industry.
12. The CMP composition of claim 1 , which has a pH of from 3 to 6.
13. The CMP composition of claim 1 , wherein the corrosion inhibitor decreases a hot static etch rate of the surface such that a hot static etch rate for a reference composition lacking the further corrosion inhibitor is reduced by at least 75% at a concentration of 0.001 mol/L of the corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the corrosion inhibitor and the further corrosion inhibitor,
wherein the further corrosion inhibitor decreases a hot static etch rate such that a hot static etch rate for a reference composition lacking the corrosion inhibitor is reduced by not more than 55% at a concentration of 0.001 mol/L of the further corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the corrosion inhibitor and the further corrosion inhibitor.
14. A chemical-mechanical polishing (CMP) composition, comprising:
inorganic particles, organic particles, or a mixture or composite thereof,
an N-heterocyclic compound as corrosion inhibitor,
a further corrosion inhibitor which is a (prop-2-ynyloxy)-substituted alcohol, in a concentration of from 0.01 to 5 wt %,
an oxidizing agent,
a complexing agent,
and an aqueous medium,
wherein the CMP composition has a pH of from 3 to less than 7.
15. The CMP composition according to claim 14 , wherein the N-heterocyclic compound is an imidazole, pyrazole, triazole, tetrazole, or a derivative thereof.
16. The CMP composition according to claim 15 , wherein the N-heterocyclic compound is a triazole or its derivative.
17. The CMP composition according to claim 14 , wherein the further corrosion inhibitor is 2-(prop-2-ynyloxy)ethanol, 2-(prop-2-ynyloxy)propanol, 2-(prop-2-ynyloxy)butanol, or 2-(prop-2-ynyloxy)pentanol.
18. The CMP composition according to claim 14 , wherein the particles are silica particles.
19. The CMP composition according to claim 14 , wherein the oxiding agent is a peroxo compound.
20. The CMP composition according to claim 14 , wherein the complexing agent is a carboxylic acid having at least two COOH groups, N-containing carboxylic acid, N-containing sulfonic acid, N-containing sulfuric acid, N-containing phosphonic acid, N-containing phosphoric acid, or a salt thereof.
21. A process of manufacturing a semiconductor device, the process comprising chemical-mechanical polishing a metal-containing substrate in the presence of the CMP composition of claim 14 .
22. A process of polishing a substrate, the process comprising polishing the substrate with the CMP composition of claim 14 , wherein the substrate is suitable for an application in the semiconductor industry.
23. The CMP composition of claim 14 , which has a pH of from 3 to 6.
24. A chemical mechanical polishing process, the process comprising:
chemical mechanical polishing a surface of a metal-comprising substrate with a chemical mechanical polishing composition,
wherein the composition comprises:
inorganic particles, organic particles, or a mixture or composite thereof,
an oxidizing agent,
a complexing agent,
an aqueous medium,
a strong corrosion inhibitor,
and a weak corrosion inhibitor, which is an adduct of an amine and a carboxylic acid comprising an amide moiety, in a concentration of from 0.01 to 5 wt %,
wherein the composition has a pH of from 3 to less than 7,
wherein the strong corrosion inhibitor is capable of strongly decreasing a hot static etch rate of the surface such that a hot static etch rate for a reference composition lacking the weak corrosion inhibitor is reduced by at least 75% at a concentration of 0.001 mol/L of the strong corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the strong corrosion inhibitor and the weak corrosion inhibitor,
wherein the weak corrosion inhibitor is capable of weakly decreasing a hot static etch rate such that a hot static etch rate for a reference composition lacking the strong corrosion inhibitor is reduced by not more than 55% at a concentration of 0.001 mol/L of the weak corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the strong corrosion inhibitor and the weak corrosion inhibitor.
25. The process of claim 24 , wherein the composition has a pH of from 3 to 6.