Anti-fuse array of semiconductor device and method for operating the same
An anti-fuse array includes: a plurality of first transistors having a matrix structure over a semiconductor substrate; a plurality of second transistors respectively disposed adjacent to first ends of the plurality of first transistors along a first direction of the matrix structure; and a plurality of third transistors respectively disposed at second ends of the plurality of first transistors along a second direction.
1. An anti-fuse array comprising:
a plurality of first transistors having a matrix structure over a semiconductor substrate, the plurality of first transistors including a plurality of gate lines extending along a first direction, a plurality of channel lines extending along a second direction, and a plurality of gate insulation film lines extending in the first direction to overlap portions of the plurality of channel lines;
a plurality of second transistors respectively disposed adjacent to first ends of the plurality of gate lines; and
a plurality of third transistors respectively disposed at second ends of the plurality of channel lines.
2. The anti-fuse array according to claim 1 , wherein the plurality of first transistors are used as program transistors, and the pluralities of second and third transistors are used as select transistors.
3. The anti-fuse array according to claim 1 , wherein the plurality of channel lines are spaced apart from each other by a predetermined distance, and
wherein the plurality of gate lines are disposed over the plurality of gate insulation film lines to overlap portions of the plurality of channel lines.
4. The anti-fuse array according to claim 1 , wherein
the plurality of gate insulation film lines are disposed perpendicular to the plurality of channel lines, and
wherein the plurality of gate lines are disposed over the gate insulation film lines.
5. The anti-fuse array according to claim 1 , wherein the plurality of channel lines is formed by ion implantation.
6. The anti-fuse array according to claim 1 , wherein at least one third transistor among the plurality of third transistors includes:
a first channel region disposed in the semiconductor substrate;
a second channel region disposed in the semiconductor substrate and spaced apart from the first channel region by a predetermined distance, the second channel region being coupled to a portion of a channel line;
a select gate insulation film disposed over a region between the first channel region and the second channel region; and
a gate electrode disposed over the select gate insulation film.
7. The anti-fuse array according to claim 6 , wherein the first channel region and the second channel region are simultaneously formed by ion implantation when the corresponding channel line is formed.
8. The anti-fuse array according to claim 1 , wherein the first direction is substantially perpendicular to the second direction.
9. The anti-fuse array according to claim 1 , wherein at least one second transistor among the plurality of second transistors includes:
first and second channel regions disposed in the semiconductor substrate and spaced apart from each other by a predetermined distance;
a select gate insulation film disposed over a region between the first and second channel regions; and
a gate electrode disposed over the gate insulation film.
10. The anti-fuse array according to claim 4 , wherein at least one second transistor among the plurality of second transistors is spaced apart from an end portion of a gate line by a predetermined distance in a longitudinal direction thereof.
11. The anti-fuse array according to claim 4 , wherein the plurality of third transistors are electrically coupled to the plurality of channel lines, respectively.
12. The anti-fuse array according to claim 4 , further comprising:
a metal structure configured to electrically interconnect a second transistor among the plurality of second transistors and a first group of the plurality of first transistors.
13. The anti-fuse array according to claim 12 , wherein the metal structure includes:
a first metal contact coupled to a gate line of the first group of the plurality of first transistors;
a second metal contact coupled to a channel region of the second transistor; and
a metal line configured to interconnect the first metal contact and the second metal contact.
14. The anti-fuse array according to claim 4 , wherein the anti-fuse array further comprises a plurality of metal structures, and
wherein the plurality of gate lines are electrically coupled to the plurality of metal structures, respectively.
15. A method for operating an anti-fuse array which includes a plurality of first transistors respectively disposed at crosspoints of a plurality of gate lines and a plurality of channel lines, a plurality of second transistors respectively coupled to the gate lines, and a plurality of third transistors respectively coupled to the plurality of channel lines, the method comprising:
applying a first voltage to the plurality of first transistors using at least one transistor among the plurality of second transistors;
applying a second voltage to the plurality of first transistors using at least one transistor among the plurality of third transistors; and
rupturing corresponding ones of the first transistors that received the first voltage and the second voltage,
wherein rupturing the corresponding ones of the first transistors includes:
after rupturing of a fourth transistor, rupturing a fifth transistor, the fifth transistor disposed closer to the third transistor than the fourth transistor on a common channel line.
16. The method according to claim 15 , wherein, during a program operation, the first voltage is a power-supply voltage (VDD), and the second voltage is a ground voltage.
17. The method according to claim 15 , further comprising:
applying a third voltage to the plurality of first transistors using at least one transistor among the plurality of second transistors, and applying a fourth voltage to the plurality of first transistors using at least one transistor among the plurality of third transistors, and performing a read operation on a transistor that received the third voltage and the fourth voltage.
18. The method according to claim 17 , wherein, during the read operation, the third voltage is a read voltage, and the fourth voltage is a ground voltage.
19. The method according to claim 15 , wherein the plurality of first transistors are used as program transistors, and the pluralities of second and third transistors are used as select transistors.
20. A method for operating an anti-fuse array which includes a plurality of first transistors formed as a matrix structure over a semiconductor substrate, a plurality of second transistors respectively formed adjacent to first ends of the plurality of first transistors along a first direction of the matrix structure, and a plurality of third transistors respectively formed at second ends of the plurality of first transistors along a second direction, the method comprising:
applying a first voltage to the plurality of first transistors using a corresponding one of the plurality of second transistors;
applying a second voltage to the plurality of first transistors using a corresponding one of the plurality of third transistors;
rupturing a fourth transistor among the plurality of first transistors located at an intersection of a gate line coupled to the corresponding one of the plurality of second transistors and a channel line coupled to the corresponding one of the plurality of third transistors due to a voltage level difference across a gate insulation film of the fourth transistor corresponding to a difference between the first voltage and the second voltage; and
after rupturing of the fourth transistor, rupturing a fifth transistor among the plurality of first transistors, the fifth transistor disposed closer to the plurality of third transistors than the fourth transistor in the second direction.