Systems and methods for dynamic alignment beam calibration
A method for performing DA (Dynamic Alignment) beam calibration in a plasma processing system is provided. The method including acquiring a positional difference, the positional difference is acquired using an optical imaging approach. The optical imaging approach comprising of positioning the wafer on the end effector, taking a still image of the wafer on the end effector, processing the still image to ascertain the center of the wafer and an end effector-defined center defined by the end effector, and determining the positional difference between the center of the wafer and the end effector-defined center defined by the end effector. The method also includes centering a wafer with respect to an end effector by compensating for a positional difference between the wafer and the end effector with robot movement compensation. The method including moving the wafer and the end effector through DA beams associated with a plasma processing module. The method also includes obtaining a reference DA beam pattern by recording a break-and-make pattern of the DA beams. The break-and-make pattern occurring as the wafer and the end effector move through the DA beams.
1. A method for performing DA (Dynamic Alignment) beam calibration in a plasma processing system, said method comprising:
acquiring a positional difference between a wafer and an end effector, said positional difference is acquired using an optical imaging approach, said optical imaging approach comprising:
positioning the wafer on the end effector of a robot arm,
taking a still image of said wafer on said end effector with an image acquisition device,
determining a center of said wafer and said end effector-defined center of said end effector by processing said still image with a processing unit,
determining said positional difference between said center of said wafer and said end effector-defined center with the processing unit,
centering said wafer with respect to said end effector by compensating for said positional difference between said center of said wafer and said end effector-defined center with robot movement compensation of the robot arm,
moving said wafer and said end effector through DA beams associated with a plasma processing module; and
obtaining a reference DA beam pattern with the processing unit by recording a break-and-make pattern of said DA beams, said break-and-make pattern occurring as said wafer and said end effector move through said DA beams,
wherein a single visual indicator is located on said end effector, said visual indicator representing a reference mark, said processing unit deriving said end effector-defined center by using the reference mark; wherein said still image includes both said visual indicator and a portion of said wafer,
wherein said visual indicator is a scribe line, said scribe line configured to be an arc of a circle such that the center of said circle coincides with said end effector-defined center.
2. The method of claim 1 further comprising determining said center of said wafer by providing a first visual indicator on said wafer for enabling the processing unit to determine from said still image said center of said wafer, said first visual indicator employed to ascertain the circle that is described by said first visual indicator.
3. The method of claim 1 further comprising taking said still image of said wafer and said end effector during production conditions with the image acquisition device such that said DA beams are calibrated in said production conditions.
4. The method of claim 3 further comprising taking said still image of said wafer and said end effector while said wafer and said end effector are located inside a plasma processing chamber.
5. The method of claim 1 further comprising determining said center of said wafer by providing a first visual indicator on said wafer for enabling the processing unit to determine from said still image said center of said wafer wherein said first visual indicator of said wafer is at least a portion of said periphery of said wafer.
6. The method of claim 1 further comprising acquiring said still image through an optical access.
7. A method for performing DA (Dynamic Alignment) beam calibration in a plasma processing system, said method comprising:
acquiring a positional difference between a wafer and an end effector, said positional difference is acquired using an optical imaging approach, said optical imaging approach comprising:
positioning the wafer on the end effector of a robot arm,
taking a still image of said wafer on said end effector with an image acquisition device,
determining a center of said wafer and said end effector-defined center of said end effector by processing said still image with a processing unit,
determining said positional difference between said center of said wafer and said end effector-defined center with the processing unit,
centering said wafer with respect to said end effector by repositioning said wafer on said end effector to correct for said positional difference,
moving said wafer and said end effector through DA beams associated with a plasma processing module; and
obtaining a reference DA beam pattern with the processing unit by recording a break-and-make pattern of said DA beams, said break-and-make pattern occurring as said wafer and said end effector move through said DA beams,
wherein a single visual indicator is located on said end effector, said visual indicator representing a reference mark, said processing unit deriving said end effector-defined center by using the reference mark; wherein said still image includes both said visual indicator and a portion of said wafer,
wherein said visual indicator is a scribe line, said scribe line configured to be an arc of a circle such that the center of said circle coincides with said end effector-defined center.
8. The method of claim 7 further comprising determining said center of said wafer by providing a first visual indicator on said wafer for enabling the processing unit to determine from said still image said center of said wafer, said first visual indicator employed to ascertain the circle that is described by said first visual indicator.
9. The method of claim 7 further comprising taking said still image of said wafer and said end effector during production conditions with the image acquisition device such that said DA beams are calibrated in said production conditions.
10. The method of claim 9 further comprising taking said still image of said wafer and said end effector while said wafer and said end effector are located inside a plasma processing chamber.
11. The method of claim 7 further comprising determining said center of said wafer by providing a first visual indicator on said wafer for enabling the processing unit to determine from said still image said center of said wafer wherein said first visual indicator of said wafer is at least a portion of said periphery of said wafer.
12. The method of claim 7 further comprising acquiring said still image through an optical access.