Data storage device having a reduced error occurrence, operating method thereof, and data processing system including the same
Operating a data storage device may include reading a first data group, detecting errors in the first data group, correcting the errors in the first data group, if the errors detected in the first data group can be corrected, and estimating a read retry estimation voltage for a subsequent read retry operation of a second data group that is different than the first data group and associated with the data storage device based on error correction data associated with the correcting the errors of the first data group.
1. An operating method of a data storage device, the operating method comprising the steps of:
reading a first data group associated with the data storage device;
detecting errors in the first data group;
correcting the errors in the first data group, if the errors detected in the first data group can be corrected;
estimating a read retry estimation voltage for a subsequent read retry operation of a second data group that is different than the first data group and associated with the data storage device based on error correction data associated with the correcting the errors of the first data group.
2. The operating method according to claim 1 , further comprising the steps of:
reading the second data group;
detecting errors in the second data group; and
performing a read retry operation of the second data group using the read retry estimation voltage, if the errors detected in the second data group cannot be corrected.
3. The operating method according to claim 2 , wherein a read retry voltage used during an initial read retry operation is set as the read retry estimation voltage.
4. The operating method according to claim 3 , wherein the read retry voltage is varied when the read retry operation is repeated.
5. The operating method according to claim 4 , wherein the read retry voltage increases when the read retry operation is repeated.
6. The operating method according to claim 4 , wherein the read retry voltage decreases when the read retry operation is repeated.
7. The operating method according to claim 1 , wherein the first data group comprises first state data having a threshold voltage that is lower than a read voltage and second state data having a threshold voltage that is higher than the read voltage,
wherein the error correction data comprises corrected error data of the first state data and corrected error data of the second state data, and
wherein a shift direction and a shift amount of the read retry estimation voltage, which is shifted on the basis of the read voltage, are varied based on a number of the corrected error data of the first state data and a number of the corrected error data of the second state data.
8. The operating method according to claim 7 , wherein, if the number of the corrected error data of the second state data is larger than the number of the corrected error data of the first state data, then the read retry estimation voltage is set to a higher level than the read voltage.
9. The operating method according to claim 7 , wherein, if the number of the corrected error data of the first state data is larger than the number of the corrected error data of the second state data, then the read retry estimation voltage is set to a lower level than the read voltage.
10. The operating method according to claim 7 , wherein, as a difference between the number of the corrected error data of the first state data and the number of the corrected error data of the second state data increases, the shift amount of the read retry estimation voltage increases.
11. The operating method according to claim 7 , wherein, as a difference between the number of the corrected error data of the first state data and the number of the corrected error data of the second state data decreases, the shift amount of the read retry estimation voltage decreases.
12. A data storage device comprising:
a nonvolatile memory device; and
a memory controller configured to:
read a first data group from the nonvolatile memory device,
correct errors detected in the read first data group, and
estimate a read retry estimation voltage for a subsequent read retry operation of a second data group that is different than the first data group and associated with the data storage device based on error correction data acquired when the detected errors are corrected.
13. The data storage device according to claim 12 , wherein the memory controller is further configured to:
read the second data group from the nonvolatile memory device, and
perform a read retry operation of the second data group using the read retry estimation voltage, if errors detected in the second data group cannot be corrected.
14. The data storage device according to claim 13 , wherein the controller comprises:
a working memory device to store a value of the read retry estimation voltage until the read retry operation is performed.
15. The data storage device according to claim 13 , wherein the controller is further configured to:
set a read retry voltage, used during an initial read retry operation, as the read retry estimation voltage.
16. The data storage device according to claim 15 , wherein the controller is further configured to:
vary the read retry voltage when the read retry operation is repeated.
17. The data storage device according to claim 12 , wherein the first data group comprises first state data having a threshold voltage that is lower than a read voltage and second state data having a threshold voltage that is higher than the read voltage,
wherein the error correction data comprise corrected error data of the first state data and corrected error data of the second state data, and
wherein the controller is further configured to:
vary a shift direction and a shift amount of the read retry estimation voltage, which is shifted on the basis of the read voltage, based on a number of the corrected error data of the first state data and a number of the corrected error data of the second state data.
18. The data storage device according to claim 17 , wherein, if the number of the corrected error data of the second state data is larger than the number of the corrected error data of the first state data, then the controller is further configured to:
set the read retry estimation voltage to a higher level than the read voltage.
19. The data storage device according to claim 17 , wherein, if the number of the corrected error data of the first state data is larger than the number of the corrected error data of the second state data, then the controller is further configured to:
set the read retry estimation voltage to a lower level than the read voltage.
20. The data storage device according to claim 17 , wherein, as a difference between the number of the corrected error data of the first state data and the number of the corrected error data of the second state data increases, then the controller is further configured to:
increase the shift amount of the read retry estimation voltage.
21. The data storage device according to claim 17 , wherein, as a difference between the number of the corrected error data of the first state data and the number of the corrected error data of the second state data decreases, then the controller is further configured to:
decrease the shift amount of the read retry estimation voltage.
22. A data processing system comprising:
a host device; and
a data storage device configured to store data processed by the host device,
wherein the data storage device comprises:
a nonvolatile memory device; and
a memory controller configured to:
read a first data group from the nonvolatile memory device,
correct errors detected in the read first data group, and
estimate a read retry estimation voltage for a subsequent read retry operation of a second data group that is different than the first data group and associated with the data storage device based on error correction data acquired when the detected errors are corrected.
23. The data processing system according to claim 22 , wherein the memory controller is further configured to:
read the second data group from the nonvolatile memory device, and
perform a read retry operation of the second data group using the read retry estimation voltage when errors detected in the second data group cannot be corrected.
24. The data processing system according to claim 23 , wherein the controller is further configured to:
set a read retry voltage, used during an initial read retry operation, as the read retry estimation voltage.
25. The data processing system according to claim 24 , wherein the controller is further configured to:
vary the read retry voltage when the read retry operation is repeated.
26. The data processing system according to claim 22 , wherein the first data group comprises first state data having a threshold voltage that is lower than a read voltage and second state data having a threshold voltage that is higher than the read voltage,
wherein the error correction data comprise corrected error data of the first state data and corrected error data of the second state data, and
wherein the controller is further configured to:
vary a shift direction and a shift amount of the read retry estimation voltage, which is shifted on the basis of the read voltage, based on a number of the corrected error data of the first state data and a number of the corrected error data of the second state data.
27. The data processing system according to claim 26 , wherein, if the number of the corrected error data of the second state data is larger than the number of the corrected error data of the first state data, then the controller is further configured to:
set the read retry estimation voltage to a higher level than the read voltage.
28. The data processing system according to claim 26 , wherein, if the number of the corrected error data of the first state data is larger than the number of the corrected error data of the second state data, then the controller is further configured to:
set the read retry estimation voltage to a lower level than the read voltage.
29. The data processing system according to claim 26 , wherein, as a difference between the number of the corrected error data of the first state data and the number of the corrected error data of the second state data increases, the controller is further configured to:
increase the shift amount of the read retry estimation voltage.
30. The data processing system according to claim 26 , wherein, as a difference between the number of the corrected error data of the first state data and the number of the corrected error data of the second state data decreases, the controller is further configured to:
decrease the shift amount of the read retry estimation voltage.