Method to match SOI transistors using a local heater element
An integrated circuit with a matched transistor pair with a matching resistance heater coupled to each transistor of the matched transistor pair. A method for forming a matching resistance heater. A method for operating an SOI integrated circuit containing a matched transistor pair with a matching resistance heater coupled to each transistor of the matched transistor pair.
1. An SOI integrated circuit, comprising:
a first transistor and a second transistor where said first and said second transistors form a matched pair in said integrated circuit;
a first matching heater element coupled to said first transistor but not the second transistor so as to alter the threshold voltage of the first transistor and a second matching heater element coupled to said second transistor but not the first transistor so as to alter the threshold voltage of the second transistor;
wherein said first matching heater element is a silicon resistor formed in contact with a source or drain of said first transistor and wherein said second matching heater element is a distinct, second silicon resistor formed in contact with a source or drain of said second transistor.
2. The SOI integrated circuit of claim 1 where said first matching heater element is a first single crystal silicon resistor formed in contact with a source or drain of said first transistor and where said second matching heater element is a distinct, second single crystal silicon resistor formed in contact with a source or drain of said second transistor.
3. The SOI integrated circuit of claim 1 where said first matching heater element is a first poly-silicon resistor coupled to a source or drain of said first transistor and where said second matching heater element is a distinct, second poly-silicon resistor coupled to a source or drain of said second transistor.
4. The SOI integrated circuit of claim 3 where said first and said second poly silicon resistors are patterned and etched simultaneously with a transistor gate in said integrated circuit.
5. The SOI integrated circuit of claim 1 where said first matching heater element is a first poly-silicon resistor overlying a gate of said first transistor and where said second matching heater element is a distinct, second poly silicon resistor overlying a gate of said second transistor.
6. The SOI integrated circuit of claim 1 where said first transistor is an nmos transistor said first matching heater element is p-type single crystal silicon and where said second transistor is an nmos transistor said second matching heater element is p-type single crystal silicon.
7. The SOI integrated circuit of claim 1 where a resistance of said first matching heater element and said second matching heater element is between 100 ohms and 10 kohms.
8. The integrated circuit of claim 7 where the resistance of said first matching heater element and said second matching heater element is about 5 kohms.
9. An SOI integrated circuit, comprising:
a first transistor and a second transistor where said first and said second transistors form a matched pair in said integrated circuit;
a first matching polysilicon resistor heater element coupled to the first transistor but not the second transistor so as to alter the threshold voltage of the first transistor and a distinct, second matching polysilicon resistor heater element coupled to the second transistor but not the first transistor so as to alter the threshold voltage of the second transistor.
10. The SOI integrated circuit of claim 9 , wherein the first polysilicon resistor is formed over a gate of the first transistor and the second polysilicon resistor is formed over a gate of the second transistor.