Bent nanowires and related probing of species
Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
1. An article, comprising:
a nanoscale wire having at least one kink, wherein the nanoscale wire is a single crystal and at least a portion of a surface of the nanoscale wire is amphiphilic.
2. The article of claim 1 , wherein the nanoscale wire further comprises a coating.
3. The article of claim 2 , wherein the coating comprises a phospholipid.
4. The article of claim 1 , wherein the nanoscale wire is a semiconductor.
5. The article of claim 1 , wherein the nanoscale wire comprises a transistor.
6. The article of claim 1 , wherein the nanoscale wire is disposed on a substrate.
7. The article of claim 1 , wherein the nanoscale wire has a diameter less than 100 nm.
8. The article of claim 1 , wherein the nanoscale wire has a length greater than 1 micron.
9. The article of claim 1 , wherein the nanoscale wire has a length less than 100 nm.
10. The article of claim 1 , wherein the nanoscale wire is capable of fusing with a lipid bilayer.
11. The article of claim 10 , wherein the lipid bilayer is a cell membrane.
12. An article, comprising:
a nanoscale wire having at least one kink, wherein the nanoscale wire is a single crystal and at least a portion of a surface of the nanoscale wire is capable of fusing with a lipid bilayer.
13. The article of claim 12 , wherein the lipid bilayer is a cell membrane.
14. The article of claim 12 , wherein the nanoscale wire is capable of fusing with at least two lipid bilayers.
15. The article of claim 12 , wherein the nanoscale wire further comprises a coating.
16. The article of claim 15 , wherein the coating comprises a phospholipid.
17. The article of claim 12 , wherein the nanoscale wire is a semiconductor.
18. The article of claim 12 , wherein the nanoscale wire comprises a field effect transistor.
19. The article of claim 12 , wherein the nanoscale wire is disposed on a substrate.
20. The article of claim 12 , wherein the nanoscale wire has a diameter less than 100 nm.
21. The article of claim 12 , wherein the nanoscale wire has a length greater than 1 micron.
22. The article of claim 12 , wherein the nanoscale wire has a length less than 100 nm.
23. The article of claim 12 , wherein the nanoscale wire is amphiphilic.
24. An article, comprising:
a nanoscale wire having at least one kink, wherein the nanoscale wire is a single crystal and at least a portion of the nanoscale wire is capable of penetrating a lipid bilayer using chemical interactions.
25. The article of claim 24 , wherein the nanoscale wire further comprises a coating.
26. The article of claim 25 , wherein the coating comprises a phospholipid.
27. The article of claim 24 , wherein the lipid bilayer is a cell membrane.
28. The article of claim 24 , wherein the nanoscale wire is capable of penetrating at least two lipid bilayers.
29. The article of claim 24 , wherein the nanoscale wire is a semiconductor.
30. The article of claim 24 , wherein the nanoscale wire comprises a field effect transistor.
31. The article of claim 24 , wherein the nanoscale wire is disposed on a substrate.
32. The article of claim 24 , wherein the nanoscale wire has a diameter less than 100 nm.
33. The article of claim 24 , wherein the nanoscale wire has a length greater than 1 micron.
34. The article of claim 24 , wherein the nanoscale wire has a length less than 100 nm.
35. The article of claim 24 , wherein the nanoscale wire is amphiphilic.
36. The article of claim 1 , wherein the kink comprises a transition between a first substantially straight portion of the wire and a second substantially straight portion of the wire, wherein the transition region may have a linear length that is less than about 5% of the linear lengths of the substantially straight portions surrounding the transition region.
37. The article of claim 1 , wherein the kink has an angle of about 120°.
38. The article of claim 12 , wherein the kink comprises a transition between a first substantially straight portion of the wire and a second substantially straight portion of the wire, wherein the transition region may have a linear length that is less than about 5% of the linear lengths of the substantially straight portions surrounding the transition region.
39. The article of claim 12 , wherein the kink has an angle of about 120°.
40. The article of claim 24 , wherein the kink comprises a transition between a first substantially straight portion of the wire and a second substantially straight portion of the wire, wherein the transition region may have a linear length that is less than about 5% of the linear lengths of the substantially straight portions surrounding the transition region.
41. The article of claim 24 , wherein the kink has an angle of about 120°.