High breakdown voltage microelectronic device isolation structure with improved reliability
A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.
1. A microelectronic device, comprising:
a low voltage node of a high voltage component of the microelectronic device;
a high voltage node of the high voltage component;
a main dielectric at least 2 microns thick disposed between the low voltage node and the high voltage node; and
a lower-bandgap dielectric layer disposed between the main dielectric and the high voltage node, wherein:
the lower-bandgap dielectric layer comprises:
at least a first sub-layer having a bandgap energy less than a bandgap energy of a portion of the main dielectric adjacent to the lower-bandgap dielectric layer; and
a second sub-layer disposed between the first sub-layer and the high voltage node, the second sub-layer having a bandgap energy less than the bandgap energy of the first sub-layer;
the lower-bandgap dielectric layer extends past the high voltage node continuously around the high voltage node, by a distance which is at least twice a thickness of the lower-bandgap dielectric layer;
an isolation break in the lower-bandgap dielectric layer so that the lower-bandgap dielectric layer is not continuous at the isolation break, and the isolation break surrounds the high voltage node.
2. The microelectronic device of claim 1 , wherein the portion of the main dielectric adjacent to the lower-bandgap dielectric layer comprises silicon dioxide-based dielectric material, the first sub-layer comprises silicon oxide nitride, and the second sub-layer comprises silicon nitride.
3. The microelectronic device of claim 1 , wherein the high voltage component is a high voltage capacitor, the low voltage node is a lower plate of the high voltage capacitor, and the high voltage node is an upper plate of the high voltage capacitor.
4. The microelectronic device of claim 3 , wherein the main dielectric comprises a plurality of intra-metal dielectric (IMD) layers comprising silicon dioxide-based dielectric material and inter-level dielectric (ILD) layers comprising silicon dioxide-based dielectric material.
5. The microelectronic device of claim 1 , further comprising a low voltage component disposed outside of the isolation break.
6. The microelectronic device of claim 5 , wherein the low voltage component is a metal oxide semiconductor (MOS) transistor with a gate dielectric layer less than 70 nanometers thick.
7. The microelectronic device of claim 1 , wherein the lower-bandgap dielectric layer comprises a portion disposed outside of the isolation break.
8. The microelectronic device of claim 7 , wherein the portion of the lower-bandgap dielectric layer disposed outside of the isolation break contacts a low voltage element of the microelectronic device.
9. The microelectronic device of claim 1 , wherein an edge of the lower-bandgap dielectric layer at the isolation break is covered with a dielectric material.