Method for producing molds

1. A method for producing a nanoimprinting mold having a mold release layer on the surface thereof, comprising:

forming a mask layer having a desired pattern on a quartz substrate;

plasma etching the quartz substrate employing an etching gas including a sedimentary gas and using the mask layer as a mask to form a pattern of protrusions and recesses having a desired shape constituted by the quartz substrate and the mask layer and a mold release layer which is a blanket deposited film constituted by sediment of the sedimentary gas, covering the pattern of protrusions and recesses along the pattern of protrusions and recesses, the plasma etching being performed under conditions that recesses are formed at exposure portions of the quartz substrate from the mask layer while forming the blanket deposited film on the recesses of the quartz substrate and the mask layer.

2. A method for producing a nanoimprinting mold as defined in claim 1 , wherein:

the quartz substrate is etched while a temperature gradient is formed such that the temperature is lower at portions toward the bottoms of the recesses of the pattern of protrusions and recesses at regions at which the spatial density of plasma is lower.

3. A method for producing a nanoimprinting mold as defined in claim 2 , wherein:

the temperature gradient is formed in the thickness direction of the quartz substrate.

4. A method for producing a nanoimprinting mold as defined in claim 3 , wherein:

the degree of the temperature gradient is adjusted according to the progress of the etching of the quartz substrate.

5. A method for producing a nanoimprinting mold as defined in claim 2 , wherein:

the temperature gradient is formed in the in plane direction of the quartz substrate.

6. A method for producing a nanoimprinting mold as defined in claim 1 , wherein:

the type and/or the percentage of the sedimentary gas in the etching gas is adjusted according to the progress of the etching of the quartz substrate.

7. A method for producing a nanoimprinting mold as defined in claim 1 , wherein:

the sedimentary gas includes at least one type of gas from among CxH2x+2−yFy (x=1 or 2, 1≦y≦2x+2), C2H4−mFm (1≦m≦4), CpH2p+2−qClq (p=1 or 2, 1≦q≦2p+2), C2H4−nCln (1≦n≦4), and BCl3.

8. A method for producing a nanoimprinting mold, comprising:

forming a mask layer having a desired pattern on a quartz substrate;

etching the quartz substrate using the mask layer as a mask such that a pattern of protrusions and recesses having a desired shape is formed in the quartz substrate; and

plasma ashing the mask layer using an ashing gas including a sedimentary gas to form a mold release layer which is a blanket deposited film constituted by sediment of the sedimentary gas, covering the pattern of protrusions and recesses along the pattern of protrusions and recesses, plasma ashing being executed under conditions that the mask layer is removed while forming the blanket deposited film on the surface of the pattern of protrusions and recesses.

9. A method for producing a nanoimprinting mold as defined in claim 8 , wherein:

the mask layer is plasma ashed while a temperature gradient is formed such that the temperature is lower at portions toward the bottoms of the recesses of the pattern of protrusions and recesses at regions at which the spatial density of plasma is lower.

10. A method for producing a nanoimprinting mold as defined in claim 9 , wherein:

the temperature gradient is formed in the thickness direction of the quartz substrate.

11. A method for producing a nanoimprinting mold as defined in claim 9 , wherein:

the temperature gradient is formed in the in plane direction of the quartz substrate.

12. A method for producing a nanoimprinting mold, comprising:

forming a mask layer having a desired pattern on a quartz substrate;

plasma etching the quartz substrate employing an etching gas including a first sedimentary gas and using the mask layer as a mask under conditions that recesses are formed at exposure portions of the quartz substrate from the mask layer while forming a deposited film constituted by first sediment of the sedimentary gas on the recesses of the quartz substrate and the mask layer, and such that a pattern of protrusions and recesses having a desired shape constituted by the quartz substrate and the mask layer which is covered with the deposited film formed along the pattern of protrusions and recesses is formed; and

plasma ashing the mask layer using an ashing gas including a second sedimentary gas under conditions that the mask layer is removed while forming a deposited film constituted by sediment of the first and second sedimentary gases on the surface of the pattern of protrusions and recesses, and such that the pattern of protrusions and recesses is covered with the deposited film formed along the pattern of protrusions and recesses, which functions as a mold release layer.

13. A method for producing a nanoimprinting mold as defined in claim 12 , wherein:

the quartz substrate is etched and/or the mask layer is plasma ashed while a temperature gradient is formed such that the temperature is lower at portions toward the bottoms of the recesses of the pattern of protrusions and recesses at regions at which the spatial density of plasma is lower.

14. A method for producing a nanoimprinting mold as defined in claim 13 , wherein:

the temperature gradient is formed in the thickness direction of the quartz substrate.

15. A method for producing a nanoimprinting mold as defined in claim 13 , wherein:

the temperature gradient is formed in the in plane direction of the quartz substrate.