Light emitting heterostructure with partially relaxed semiconductor layer
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
1. A heterostructure comprising:
a light generating structure having a first side and a second side;
a n-type contact semiconductor layer located on the first side of the light generating structure;
a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer; and
a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, wherein the dislocation blocking structure includes a graded composition that changes from a first side of the dislocation blocking structure to a second side thereof.
2. The heterostructure of claim 1 , wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers.
3. The heterostructure of claim 2 , wherein the heterostructure is formed of group III-V materials, and wherein the alternating tensile and compressive sublayers have the same effective lattice constant and are formed by varying at least one of: an aluminum composition or a V/III ratio, of adjacent sublayers in the dislocation blocking structure.
4. The heterostructure of claim 3 , wherein the effective lattice constant corresponds to an effective lattice constant of the light generating structure.
5. The heterostructure of claim 1 , further comprising:
a substrate transparent to light generated by the light generating structure; and
a buffer layer adjacent to the substrate, wherein at least one of: the n-type contact semiconductor layer or the p-type contact semiconductor layer is located between the light generating structure and the buffer layer.
6. The heterostructure of claim 1 , wherein the partially relaxed sublayer has a lattice mismatch of at least one percent with an immediately adjacent semiconductor layer.
7. The heterostructure of claim 1 , wherein the heterostructure is formed of group III-V materials, and wherein the lattice mismatch is obtained by a change in an aluminum molar content of the partially relaxed sublayer.
8. The heterostructure of claim 1 , wherein a thickness of the partially relaxed sublayer is greater than a predicted critical thickness corresponding to partial relaxation.
9. The heterostructure of claim 1 , further comprising a graded layer located immediately adjacent to one of the first or second sides of the light generating structure.
10. A device comprising:
a mesa structure including:
a light generating structure having a first side and a second side;
a n-type contact semiconductor layer located on the first side of the light generating structure;
a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer; and
wherein the at least one of the contact semiconductor layers further includes a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, and wherein the dislocation blocking structure includes a graded composition that changes from a first side of the dislocation blocking structure to a second side thereof.
11. The device of claim 10 , further comprising:
a substrate transparent to light generated by the light generating structure; and
a buffer layer adjacent to the substrate, wherein at least one of: the n-type contact semiconductor layer or the p-type contact semiconductor layer is located between the light generating structure and the buffer layer.
12. The device of claim 10 , wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers.
13. The device of claim 12 , wherein an effective lattice constant of the dislocation blocking structure corresponds to an effective lattice constant of the light generating structure.
14. The device of claim 10 , wherein a thickness of the partially relaxed sublayer is greater than a predicted critical thickness corresponding to partial relaxation.
15. The device of claim 10 , further comprising a graded layer located immediately adjacent to one of the first or second sides of the light generating structure.
16. A method comprising:
forming a heterostructure, the heterostructure comprising:
a light generating structure having a first side and a second side;
an n-type contact semiconductor layer located on the first side of the light generating structure; and
a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer, wherein the forming includes forming a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, wherein the dislocation blocking structure includes a graded composition that changes from a first side of the dislocation blocking structure to a second side thereof.
17. The method of claim 16 , wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers.
18. The method of claim 17 , wherein the forming the heterostructure includes configuring the dislocation blocking structure such that an effective lattice constant of the dislocation blocking structure substantially matches an effective lattice constant of the light generating structure.
19. The method of claim 18 , wherein the heterostructure is formed of group III-V materials, and wherein the alternating tensile and compressive sublayers have the same effective lattice constant and are formed by varying at least one of: an aluminum composition or a V/III ratio, of adjacent sublayers in the dislocation blocking structure.
20. The method of claim 16 , the heterostructure further including a graded layer located immediately adjacent to one of the first or second sides of the light generating structure.
21. The device of claim 10 , wherein the mesa structure further includes a p-type metal contact located on the p-type contact semiconductor layer, and wherein the device further includes an n-type metal contact located adjacent to the n-type contact semiconductor layer, wherein the n-type metal contact is separated from the mesa structure without contact thereof.