Methods of fabricating memory devices having charged species
View Patent ↗Methods for fabricating memory devices having charged species. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material.
1. A method for fabricating memory device, the method comprising:
forming a dielectric material adjacent to a semiconductor;
introducing a charged species into the dielectric material wherein the charged species has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV; and
forming a control gate adjacent to the dielectric material.
2. The method of claim 1 , wherein introducing the charged species is performed during formation of the dielectric material.
3. The method of claim 1 , wherein introducing the charged species comprises immersing the semiconductor into an alkali solution.
4. The method of claim 3 , wherein the semiconductor is immersed in a solution of one of Ca(OH) 2 or MgCl 2 +Mg(OH) 2 dissolved in deionized water.
5. The method of claim 1 , wherein introducing the charged species is performed after forming the dielectric material.
6. The method of claim 1 , wherein introducing the charged species is performed by contacting dielectric material with an alkali solution.
7. The method of claim 1 , wherein introducing the charged species is performed prior to formation of the dielectric material.
8. The method of claim 1 , wherein the charged species is a non-hydrogenous ion.
9. The method of claim 1 , wherein the charged species has an activation energy of diffusion greater than or equal to about 0.8 eV.
10. The method of claim 1 , wherein introducing a charged species comprises introducing a charged species selected from the group consisting of a cation and an anion.
11. The method of claim 1 , wherein introducing a charged species into the dielectric material comprises introducing a charged species having an activation energy of diffusion within the dielectric material of greater than hydrogen in the dielectric material.
12. A method for fabricating memory device, the method comprising:
forming a dielectric material adjacent to a semiconductor;
introducing a non-hydrogenous ion into the dielectric material wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV; and
forming a control gate adjacent to the dielectric material.
13. The method of claim 12 , wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material greater than or equal to about 0.8 eV.
14. The method of claim 12 , wherein introducing a non-hydrogenous ion comprises introducing a non-hydrogenous ion selected from the group consisting of a cation and an anion.
15. The method of claim 12 , wherein forming a dielectric material comprises forming a dielectric oxide.
16. The method of claim 12 , wherein introducing a non-hydrogenous ion into the dielectric material comprises introducing the non-hydrogenous ion during formation of the dielectric material.
17. The method of claim 16 , wherein introducing the non-hydrogenous ion during formation of the dielectric material comprises contacting the semiconductor with an alkali solution prior to forming the dielectric material.
18. A method for fabricating memory device, the method comprising:
forming a dielectric material adjacent to a semiconductor;
introducing a non-hydrogenous ion into the dielectric material by contacting the dielectric material with an alkali solution containing the non-hydrogenous ion, wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV; and
forming a control gate adjacent to the dielectric material.
19. The method of claim 18 , wherein introducing a non-hydrogenous ion comprises introducing a non-hydrogenous ion selected from the group consisting of a non-hydrogenous cation and a non-hydrogenous anion.
20. The method of claim 18 , wherein contacting the dielectric material with an alkali solution containing the non-hydrogenous ion comprises contacting the dielectric material with an aqueous solution selected from the group consisting of an aqueous solution of calcium hydroxide and an aqueous solution of magnesium chloride+magnesium hydroxide.