Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
A semiconductor memory device includes a memory cell unit, word lines, a driver circuit, and first transistors. The word lines are connected to the control gates of 0-th to N-th memory cells. The (N+1) number of first transistors transfer the voltage to the word lines respectively. Above one of the first transistors which transfers the voltage to an i-th (i is a natural number in the range of 0 to N) word line, M (M<N) of the word lines close to the i-th word line pass through a region above the gate electrode by a first level interconnection without passing over the impurity diffused layers.
1. A semiconductor memory device, comprising:
a memory cell unit including a first memory cell, a second memory cell, a third memory cell, and a fourth memory cell that are connected in series;
a first word line connected to the first memory cell;
a second word line connected to the second memory cell;
a third word line connected to the third memory cell;
a fourth word line connected to the fourth memory cell;
a driver circuit configured to apply a voltage to the first memory cell, the second memory cell, the third memory cell, and the fourth memory cell; and
a first transistor including a first diffused layer and a second diffused layer, wherein the first diffused layer is connected to the first word line, and the second diffused layer is connected to the driver circuit,
wherein when data is written into the first memory cell, a first voltage is applied to the first word line, a second voltage is applied to the second word line and the third word line, and a third voltage is applied to the fourth word line, and
the first voltage is larger than both the second voltage and the third voltage, and the third voltage is larger than the second voltage, and
wherein the second memory cell and the third memory cell are located between the first memory cell and the fourth memory cell, and
the second word line and the third word line are located above a gate electrode of the first transistor without passing over the first diffused layer and the second diffused layer of the first transistor.
2. The device according to claim 1 , further comprising:
a second transistor connected between the second word line and the driver circuit;
a third transistor connected between the third word line and the driver circuit; and
a fourth transistor connected between the fourth word line and the driver circuit,
wherein each of the first word line, the second word line, the third word line, and the fourth word line is arranged in a first direction,
each of the first transistor, the second transistor, the third transistor, and the fourth transistor has a gate length in a second direction perpendicular to the first direction, and
the first transistor, the second transistor, the third transistor, and the fourth transistor are arranged in the first direction.
3. The device according to claim 2 , wherein the first memory cell, the second memory cell, the third memory cell, and the fourth memory cell are connected between a first selection transistor and a second selection transistor, and
the memory cell unit is connected to a bit line via the first selection transistor, and is connected to a source line via the second selection transistor, and
wherein a distance between the first transistor and the memory cell unit is smaller than a distance between the second transistor and the memory cell unit.
4. The device according to claim 3 , wherein the second memory cell, the third memory cell, and the fourth memory cell are located between the first memory cell and the second selection transistor.
5. The device according to claim 1 , wherein the second voltage turns off the second memory cell and the third memory cell regardless of held data.
6. The device according to claim 1 , further comprising a contact plug formed on the second diffused layer,
wherein the first transistor is connected to the driver circuit via the contact plug, and
the fourth word line is located in a region above the second diffused layer and between a gate electrode of the first transistor and the contact plug.