Textured optoelectronic devices and associated methods of manufacture
View Patent ↗Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
1. A method for forming a solid state optoelectronic device, comprising:
forming an optoelectronic transducer having at least a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials;
forming a titanium texturing material on the optoelectronic transducer;
forming a transparent conductive material on the titanium texturing material, wherein forming the transparent conductive material comprises growing a non-uniform texture from the transparent conductive material, wherein the non-uniform texture comprises a pattern;
heating the transparent conductive material to produce a textured surface with a plurality of protuberances; and
etching the transparent conductive material, the titanium texturing material, and a portion of the optoelectronic transducer, thereby substantially transferring the pattern to the optoelectronic transducer.
2. The method of claim 1 wherein forming the titanium texturing material comprises forming a titanium material having a thickness from about 30 angstroms to about 60 angstroms.
3. The method of claim 1 wherein forming a transparent conductive material comprises forming an indium tin oxide on the titanium texturing material.
4. The method of claim 1 wherein the optoelectronic transducer comprises a photovoltaic cell.
5. The method of claim 1 wherein the optoelectronic transducer comprises a solid state emitter.
6. The method of claim 1 wherein forming the transparent conductive material comprises growing indium tin oxide on the titanium texturing material.
7. The method of claim 6 wherein the indium tin oxide is grown at a temperature from about 100° C. to about 600° C.
8. The method of claim 6 wherein the indium tin oxide is grown at a temperature from about 350° C. to about 450° C.
9. The method of claim 8 wherein the titanium texturing material has a thickness from about 30 angstroms to about 60 angstroms, and the indium tin oxide is grown at a temperature of about 400° C.
10. The method of claim 1 wherein the protuberances are irregular pillars projecting away from the optoelectronic transducer.
11. The method of claim 1 wherein the texturing material has a generally planar surface and the method further comprises:
forming a mask on the texturing material;
patterning the mask to expose selected portions of the texturing material where protuberances of the transparent conductive material are desired; and
growing the transparent conductive material on the mask and the exposed portions of the texturing material, wherein the transparent conductive material is generally planar over the mask and the transparent conductive material has protuberances over the exposed portions of the texturing material.
12. The method of claim 1 wherein etching the transparent conductive material, the titanium texturing material, and a portion of the optoelectronic transducer comprises dry-etching.
13. A method for forming a solid state optoelectronic device, comprising:
forming an optoelectronic transducer;
forming a texturing material on the optoelectronic transducer;
forming a conductive material on the texturing material;
heating the conductive material to produce a plurality of protuberances in the conductive material, wherein the plurality of protuberances form a pattern; and
removing the conductive material, the texturing material and at least a portion of the optoelectronic transducer via etching to transfer the pattern to the optoelectronic transducer.
14. The method of claim 13 wherein forming the texturing material comprises forming a texturing material having a thickness from about 30 angstroms to about 60 angstroms.
15. The method of claim 14 wherein removing the conductive material, the texturing material and at least a portion of the optoelectronic transducer via etching comprises removing the conductive material, the texturing material and at least a portion of the optoelectronic transducer via dry-etching.