β-Ga
A β-Ga 2 O 3 -based single crystal substrate includes a β-Ga 2 O 3 -based single crystal. The β-Ga 2 O 3 -based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.
1. A β-Ga 2 O 3 -based single crystal substrate, comprising a β-Ga 2 O 3 -based single crystal,
wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and
wherein the full width at half maximum of x-ray rocking curve is obtained at a (−201) plane or a (001) plane of the β-Ga 2 O 3 -based single crystal.
2. The β-Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the full width at half maximum is not more than 35 seconds.
3. A β-Ga 2 O 3 -based single crystal substrate, comprising a β-Ga 2 O 3 -based single crystal,
wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and
wherein the 13-Ga 2 O 3 -based single crystal comprises a main surface with a plane orientation of (−201), (101) or (001).
4. The β-Ga 2 O 3 -based single crystal substrate according to claim 3 , wherein the full width at half maximum is not more than 35 seconds.
5. A β-Ga 2 O 3 -based single crystal substrate, comprising an average dislocation density of less than 9×10 4 cm −2 .
6. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein the average dislocation density is not more than 7.8×10 4 cm −2 .
7. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , further comprising a main surface with a plane orientation of (−201), (101), or (001).
8. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein the substrate is free from any twinned crystal.
9. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein the substrate further comprises a diameter of not less than 2 inches.
10. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , further comprising a region free from any twinning plane,
wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface.
11. A β-Ga 2 O 3 -based single crystal substrate, comprising β-Ga 2 O 3 -based single crystal,
wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and
wherein the substrate is free from any twinned crystal.
12. A β-Ga 2 O 3 -based single crystal substrate, comprising β-Ga 2 O 3 -based single crystal,
wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and
wherein the substrate further comprises a diameter of not less than 2 inches.
13. A β-Ga 2 O 3 -based single crystal substrate, comprising β-Ga 2 O 3 -based single crystal,
wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds,
wherein the substrate further comprises a region free from any twinning plane, and
wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface.