Encapsulated semiconductor device
A semiconductor device includes a carrier and a semiconductor chip disposed over the carrier. The semiconductor chip has a first surface and a second surface opposite to the first surface, wherein the second surface faces the carrier. Further, the semiconductor device includes a pre-encapsulant covering at least partially the second surface of the semiconductor chip and at least partially a side wall surface of the semiconductor chip. The pre-encapsulant has a thermal conductivity of equal to or greater than 10 W/(m·K) and a specific heat capacity of equal to or greater than 0.2 J/(g·K).
1. A semiconductor device, comprising:
a carrier;
a semiconductor chip disposed over the carrier, wherein the semiconductor chip has a first surface and a second surface opposite to the first surface, and wherein the second surface faces the carrier;
an encapsulant covering at least partially the second surface of the semiconductor chip and at least partially a side wall surface of the semiconductor chip, wherein the encapsulant comprises a thermal conductivity of equal to or greater than 10 W/(m·K) and a specific heat capacity of equal to or greater than 0.2 J/(g·K); and
an electrically insulating encapsulation material forming an encapsulation body covering at least partially the first surface of the semiconductor chip and the encapsulant at the side wall surface of the semiconductor chip.
2. The semiconductor device of claim 1 , wherein the encapsulant has a thickness above the second surface of equal to or greater than 20 μm.
3. The semiconductor device of claim 1 , wherein the encapsulant has a thickness above the side wall surface of equal to or greater than 20 μm.
4. The semiconductor device of claim 1 , wherein the first surface is an active surface of the semiconductor chip and the second surface is a non-active surface of the semiconductor chip.
5. The semiconductor device of claim 1 , wherein the encapsulant comprises a layer of ceramics or a metal layer or a multi-layer structure comprising a layer of ceramics and a metal layer.
6. The semiconductor device of claim 1 , wherein the encapsulant comprises a thermal conductivity of equal to or greater than 40 W/(m·K).
7. The semiconductor device of claim 1 , wherein the encapsulant comprises a specific heat capacity of equal to or greater than 0.4 J/(g·K).
8. The semiconductor device of claim 1 , wherein the second surface of the semiconductor chip is void of any chip electrode.
9. The semiconductor device of claim 1 , wherein the semiconductor chip is a power chip based on GaN, SiGe, GaAs, AlGaN, InGaAs, InAlAs, SiC or Si.
10. The semiconductor device of claim 1 , wherein the encapsulant completely covers the second surface of the semiconductor chip.
11. The semiconductor device of claim 1 , wherein the encapsulant predominantly covers the side wall surface of the semiconductor chip.
12. A semiconductor device, comprising:
a carrier;
a semiconductor chip disposed over the carrier, wherein the semiconductor chip has a first surface and a second surface opposite to the first surface, and wherein the second surface faces the carrier; and
an encapsulant covering at least partially the second surface of the semiconductor chip and at least partially a side wall surface of the semiconductor chip, wherein the encapsulant comprises a thermal conductivity of equal to or greater than 10 W/(m·K) and a specific heat capacity of equal to or greater than 0.2 J/(g·K),
wherein the encapsulant has a thickness above the second surface of equal to or greater than 20 μm.
13. A semiconductor device, comprising:
a carrier;
a semiconductor chip disposed over the carrier, wherein the semiconductor chip has a first surface and a second surface opposite to the first surface, and wherein the second surface faces the carrier; and
an encapsulant covering at least partially the second surface of the semiconductor chip and at least partially a side wall surface of the semiconductor chip, wherein the encapsulant comprises a thermal conductivity of equal to or greater than 10 W/(m·K) and a specific heat capacity of equal to or greater than 0.2 J/(g·K),
wherein the encapsulant has a thickness above the side wall surface of equal to or greater than 20 μm.
14. A semiconductor device, comprising:
a carrier;
a semiconductor chip disposed over the carrier, wherein the semiconductor chip has a first surface and a second surface opposite to the first surface, and wherein the second surface faces the carrier; and
an encapsulant covering at least partially the second surface of the semiconductor chip and at least partially a side wall surface of the semiconductor chip, wherein the encapsulant comprises a thermal conductivity of equal to or greater than 10 W/(m·K) and a specific heat capacity of equal to or greater than 0.2 J/(g·K),
wherein the encapsulant comprises a thermal conductivity of equal to or greater than 40 W/(m·K).