Organosilane precursors for ALD/CVD silicon-containing film applications
Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
1. A Si-containing thin film forming precursor having the following formula:
wherein R 1 and R 2 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group and R 3 may be H, a C1 to C6 alkyl group, a C3-C20 aryl or heterocycle group, an amino group, an alkoxy group, or a halogen.
2. The Si-containing thin film forming precursor of claim 1 , having the following formula:
wherein R 1 and R 2 may each independently be a C1 to C6 alkyl group.
3. The Si-containing thin film forming precursor of claim 2 , wherein the molecule is SiH 3 (N i Pr-amd).
4. The Si-containing thin film forming precursor of claim 1 , having the following formula:
wherein R 1 , R 2 , R 3 and R 4 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.
5. The Si-containing thin film forming precursor of claim 1 , having the following formula:
wherein R 1 , R 2 , and R 3 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.
6. The Si-containing thin film forming precursor of claim 1 , having the following formula:
wherein R 1 and R 2 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle and X may be CI, Br, I, or F.
7. A method of depositing a Si-containing layer on a substrate, the method comprising:
Introducing at least one organosilane precursor of claim 1 into a reactor having at least one substrate disposed therein;
depositing at least part of the organosilane precursor onto the at least one substrate to form a Si-containing layer using a vapor deposition method.
8. The method of claim 7 , further comprising introducing into the reactor at least one co-reactant.
9. The method of claim 8 , wherein the co-reactant is selected from the group consisting of P 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , a carboxylic acid, radicals thereof, and combinations thereof, preferably plasma treated oxygen or ozone.
10. The method of claim 8 , wherein the co-reactant is selected from the group consisting of H 2 , NH 3 , (SiH 3 ) 3 N, hydridosilanes (such as SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , Si 5 H 10 , Si 6 H 12 ), chlorosilanes and chloropolysilanes (such as SiHCl 3 , SiH 2 Cl 2 , SiH 3 Cl, Si 2 Cl 6 , Si 2 HCl 5 , Si 3 Cl 8 ), alkysilanes (such as Me 2 SiH 2 , Et 2 SiH 2 , MeSiH 3 , EtSiH 3 ), hydrazines (such as N 2 H 4 , MeHNNH 2 , MeHNNHMe), organic amines (such as NMeH 2 , NEtH 2 , NMe 2 H, NEt 2 H, NMe 3 , NEt 3 , (SiMe 3 ) 2 NH), pyrazoline, pyridine, B-containing molecules (such as B 2 H 6 , 9-borabicylo[3,3,1]none, trimethylboron, triethylboron, borazine), alkyl metals (such as trimethylaluminum, triethylaluminum, dimethylzinc, diethylzinc), radical species thereof, and mixtures thereof.
11. The method of claim 10 , wherein the co-reactant is selected from the group consisting of H 2 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.
12. The method of claim 10 , wherein the co-reactant is selected from the group consisting of SiHCl 3 , Si 2 Cl 6 , Si 2 HCl 5 , Si 2 H 2 Cl 4 , and cyclo-Si 6 H 6 Cl 6 .
13. The method of claim 7 , wherein the vapor deposition process is a chemical vapor deposition process.
14. The method of claim 7 , wherein the vapor deposition process is an atomic layer deposition process.
15. The method of claim 7 , wherein the organosilane precursor has the following formula:
wherein R 1 and R 2 may each independently be a C1 to C6 alkyl group.
16. The method of claim 15 , wherein the organosilane precursor is SiH 3 (N i Pr-amd).
17. The method of claim 7 , wherein the organosilane precursor has the following formula:
wherein R 1 , R 2 , R 3 and R 4 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.
18. The method of claim 7 , wherein the organosilane precursor has the following formula:
wherein R 1 , R 2 , and R 3 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.
19. The method of claim 7 , wherein the organosilane precursor has the following formula:
wherein R 1 and R 2 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle and X may be CI, Br, I, or F.