Air gap process
Methods are described for forming “air gaps” between adjacent metal lines on patterned substrates. The common name “air gap” will be used interchangeably with the more technically accurate “gas pocket” and both reflect a variety of pressures and elemental ratios. The air gaps are produced within narrow gaps between copper lines while wide gaps retain dielectric material. Retention of the dielectric material within the wide gaps enables formation of a desirable planar top surface. Using a hardmask layer and a selective dry-etch process enables a wet processing step to be avoided right before the formation of the air gaps. The air gaps can have a dielectric constant approaching one, favorably reducing interconnect capacitance compared with typical low-k dielectric materials.
1. A method of forming air gaps between conducting lines, the method comprising:
forming and patterning a hardmask layer on a patterned substrate, wherein the patterned hard mask layer does not cover dielectric material in a narrow gap between two adjacent conducting lines but does cover dielectric material in a wide gap between two other adjacent conducting lines;
flowing a pretreatment gas into a substrate processing region housing the patterned substrate while forming a local plasma in the substrate processing region to treat the dielectric in the narrow gap;
flowing a fluorine-containing precursor into a remote plasma region separated from the substrate processing region by a showerhead while forming a remote plasma in the remote plasma region to form plasma effluents;
flowing the plasma effluents into the substrate processing region to etch the dielectric material from the narrow gap while retaining the dielectric material in the wide gap, wherein a top surface of the dielectric material remains planar after the etch; and
forming a non-conformal layer of dielectric on the patterned substrate, wherein dielectric formed on each conducting line grow and join together to trap an air gap in the narrow gap while the wide gap remains filled with dielectric material resulting in no air gap formed within the wide gap.
2. The method of claim 1 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of nitrogen trifluoride, hydrogen fluoride, atomic fluorine, diatomic fluorine, a fluorocarbon and xenon difluoride.
3. The method of claim 1 wherein the operation of flowing the fluorine-containing precursor into the remote plasma region further comprises flowing a hydrogen-containing precursor into the remote plasma region.
4. The method of claim 3 wherein the hydrogen-containing precursor comprises one of atomic hydrogen, molecular hydrogen, ammonia, a perhydrocarbon and an incompletely halogen-substituted hydrocarbon.
5. The method of claim 1 wherein the dielectric material is a low-k dielectric having dielectric constant less than three.
6. The method of claim 1 wherein the operation of flowing the fluorine-containing precursor into the remote plasma region further comprises flowing a nitrogen-and-oxygen-containing precursor into the remote plasma region.
7. The method of claim 6 wherein the nitrogen-and-oxygen-containing precursor comprises one or more of N 2 /O 2 , N 2 O, NO, NO 2 or N 2 O 2 .
8. The method of claim 6 wherein the nitrogen-and-oxygen-containing precursor consists of nitrogen and oxygen.
9. The method of claim 1 wherein the hardmask layer is oxygen-free.
10. The method of claim 1 wherein the hardmask layer comprises silicon, carbon and nitrogen.
11. The method of claim 1 wherein the local plasma is a capacitively-coupled plasma and the remote plasma is a capacitively-coupled plasma.
12. The method of claim 1 wherein the narrow gap is less than or about 15 nm wide.
13. The method of claim 1 wherein the wide gap is more than twice as wide as the narrow gap.
14. The method of claim 1 wherein the air gap, at its widest point, extends at least 80% of the way between two adjacent conducting lines on either side of the narrow gap.
15. A method of forming air gaps between copper lines on a patterned substrate, the method comprising:
patterning a low-k dielectric layer on the patterned substrate;
depositing copper on the patterned low-k dielectric layer;
planarizing the copper to expose a narrow gap between two adjacent copper lines and a wide gap between two other adjacent copper lines;
forming and patterning a hardmask layer, wherein the patterned hard mask layer covers low-k material in the wide gap but does not cover low-k material in the narrow gap;
flowing a pretreatment gas into a substrate processing region housing the patterned substrate while forming a local plasma in the substrate processing region to treat the low-k material in the narrow gap;
flowing NF 3 into a remote plasma region separated from the substrate processing region by a showerhead while forming a remote plasma in the remote plasma region to form plasma effluents;
flowing the plasma effluents into the substrate processing region to etch the low-k material from the narrow gap while retaining the low-k material in the wide gap, wherein a top surface of the low-k material remains planar after the etch; and
forming a non-conformal layer of dielectric on the patterned substrate, wherein dielectric formed on each copper line grow and join together to trap an air gap in the narrow gap while the wide gap remains filled with low-k dielectric material resulting in no air gap formed within the wide gap.