Method of forming a metal from a cobalt metal precursor
A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co 2 (CO) 6 (R 1 C≡CR 2 ), wherein R 1 and R 2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt(II) complex comprising nitrogen-based supporting ligands.
1. A method comprising:
decomposing a metal precursor on an integrated circuit device; and
forming a metal from the metal precursor,
wherein the metal precursor is selected from the group consisting of:
(i) a mononuclear cobalt monocarbonyl nitrosyl or cobalt dicarbonyl nitrosyl;
(ii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;
(iii) a mononuclear cobalt carbonyl bonded to a mononuclear or binuclear allyl; and
(iv) a cobalt(II) complex comprising nitrogen-based supporting ligands selected from the group consisting of:
wherein R 3 , R 4 , R 5 and R 6 are individually selected from a straight or branched monovalent hydrocarbon group have one to three carbon atoms that may be substituted and L 1 , L 2 , L 3 and L 4 are independently selected from a substituted amine and quinuclidine.
2. The method of claim 1 , wherein the metal precursor comprises a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:
wherein R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 and R 17 are independently selected from a straight or branched chain alkyl having one to four carbon atoms.
3. The method of claim 1 , wherein the metal precursor is selected from the group consisting of:
wherein R 18 , R 19 , R 20 , R 21 , R 22 and R 23 are independently selected from a straight or branched chain alkyl having one to four carbon atoms and R 20 and R 21 may further individually be a substituted amine.
4. The method of claim 1 , wherein the metal precursor is selected from the group consisting of:
wherein R 24 , R 25 and R 26 are independently selected from a straight or branched chain alkyl having one to the three carbon atoms and L 5 , L 6 and L 7 are independently selected from the group consisting of:
5. The method of claim 1 , wherein forming the metal comprises combining the precursor with a coreactant.
6. A method comprising:
loading an integrated circuit device in a deposition chamber;
depositing a transition metal precursor on the integrated circuit device; and
decomposing the transition metal precursor with a coreactant;
wherein the transition metal precursor is selected from the group consisting of:
(i) a mononuclear cobalt monocarbonyl nitrosyl or cobalt dicarbonyl nitrosyl;
(ii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;
(iii) a mononuclear cobalt carbonyl bonded to a mononuclear or binuclear allyl; and
(iv) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of:
wherein R 3 is selected from a straight or branched monovalent hydrocarbon group have one to three carbon atoms and L is selected from Me 2 EtN, Me 3 N, Et 3 N and quinuclidine.
7. The method of claim 6 , wherein the metal precursor comprises a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:
wherein R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 and R 15 are independently selected from a straight or branched chain alkyl having one to the three carbon atoms.
8. The method of claim 6 , wherein the metal precursor is selected from the group consisting of:
wherein R 22 and R 23 are independently selected from a straight or branched chain alkyl having one to the four carbon atoms and R 20 and R 21 may further individually be a substituted amine.
9. The method of claim 6 , wherein the metal precursor is selected from the group consisting of:
wherein R 24 , R 25 and R 26 are independently selected from a straight or branched chain alkyl having one to the three carbon atoms and L 2 , L 3 and L 4 are independently selected from the group consisting of:
10. The method of claim 6 , wherein the coreactant is selected from the group consisting of a hydrogen gas or plasma, an ammonia gas or plasma, a hydrazine, a borane, an alane and a silane.