Ga2O3 semiconductor element
A Ga 2 O 3 semiconductor element includes: an n-type β-Ga 2 O 3 single crystal film, which is formed on a high-resistance β-Ga 2 O 3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-Ga 2 O 3 single crystal film; and a gate electrode, which is formed on the n-type β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode.
1. A Ga 2 O 3 -based semiconductor element, comprising:
a β-Ga 2 O 3 single crystal film that is formed on a main surface of a β-Ga 2 O 3 substrate, the main surface being rotated from 50° to 90° with respect to a (100) plane;
a source electrode and a drain electrode that are formed on a same side of the β-Ga 2 O 3 single crystal film;
a gate electrode that is formed on the β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode;
a first region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode and including a controlled first dopant concentration; and
a second region formed to surround the first region and including a controlled second dopant concentration lower than the controlled first dopant concentration,
wherein the β-Ga 2 O 3 substrate includes a p-type dopant to be a high electrical resistance.
2. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the semiconductor element further comprises a Ga 2 O 3 -based MISFET, and
wherein the gate electrode is formed on the β-Ga 2 O 3 single crystal film via a gate insulating film.
3. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the first region comprises a source region and a drain region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively.
4. The Ga 2 O 3 -based semiconductor element according to claim 3 , wherein the β-Ga 2 O 3 single crystal film, the source region and the drain region are n-type, and
wherein the second region comprises a p-type or high-resistance body region formed in the β-Ga 2 O 3 single crystal film so as to surround the source region.
5. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the semiconductor element further comprises a Ga 2 O 3 -based MESFET, and
wherein the gate electrode is formed directly on the β-Ga 2 O 3 single crystal film.
6. The Ga 2 O 3 -based semiconductor element according to claim 5 , wherein the β-Ga 2 O 3 single crystal film is n-type, and
wherein the semiconductor element further comprises an n-type source region and an n-type drain region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively.
7. The Ga 2 O 3 -based semiconductor element according to claim 2 , wherein the first region comprises a source region and a drain region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively.
8. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein an upper surface of the first region is flush with an upper surface of the β-Ga 2 O 3 single crystal film.
9. The Ga 2 O 3 -based semiconductor element according to claim 8 , wherein an upper surface of the second region is flush with an upper surface of the β-Ga 2 O 3 single crystal film.
10. The Ga 2 O 3 -based semiconductor element according to claim 9 , wherein the source electrode is disposed on the upper surface of the first region.
11. The Ga 2 O 3 -based semiconductor element according to claim 9 , wherein the source electrode abuts the upper surface of the first region.
12. The Ga 2 O 3 -based semiconductor element according to claim 11 , wherein the gate electrode is formed on the β-Ga 2 O 3 single crystal film via a gate insulating film disposed on a bottom surface of the gate electrode.
13. The Ga 2 O 3 -based semiconductor element according to claim 12 , wherein a bottom surface of the gate insulating film is disposed on the upper surface of the first region.
14. The Ga 2 O 3 -based semiconductor element according to claim 12 , wherein a bottom surface of the gate insulating film abuts the upper surface of the first region.
15. The Ga 2 O 3 -based semiconductor element according to claim 14 , wherein the bottom surface of the gate insulating film is further disposed on the upper surface of the second region.
16. The Ga 2 O 3 -based semiconductor element according to claim 15 , wherein the bottom surface of the gate insulating film further abuts the upper surface of the second region.
17. The Ga 2 O 3 -based semiconductor element according to claim 16 , wherein the bottom surface of the gate insulating film further abuts an upper surface of the β-Ga 2 O 3 single crystal film.