Channel layer for stretchable transistors
Provided are a material for forming a channel layer for a stretchable TFT, a method of preparing a channel layer for a stretchable TFT, a channel layer for a stretchable TFT, and a stretchable TFT. The material for forming the channel layer for the stretchable TFT includes an elastomer, an organic semiconductor material and a solvent. By mixing an elastomer and an organic semiconductor material and forming a thin film, a channel layer having an excellent conductivity and stretchability may be obtained.
1. A material for forming a channel layer for a stretchable thin film transistor, the material comprising an elastomer, an organic semiconductor material and a solvent, wherein the organic semiconductor material is selected from the group consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(quaterthiophene) (PQT), poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 6,13-bis(triisopropylsilyethylnyl)pentacene (TIPS pentacene), and combinations thereof.
2. The material for forming the channel layer for the stretchable thin film transistor of claim 1 , wherein the elastomer is selected from the group consisting of a polybutadiene (PB), a styrene-butadiene copolymer, a styrene-ethylene-butylene-styrene copolymer (SEBS), an ethylene propylene diene rubber (EPDM), an acrylic rubber, a polychloroprene rubber (CR), a polyurethane (PU), a fluoro-rubber, a butyl rubber, and combinations thereof.
3. The material for forming the channel layer for the stretchable thin film transistor of claim 1 , wherein a weight average molecular weight of the elastomer is from about 65,470 g/mol to about 172,300 g/mol.
4. The material for forming the channel layer for the stretchable thin film transistor of claim 1 , wherein the solvent is selected from the group consisting of chloroform, chlorobenzene, toluene, dimethylformaldehyde, tetrahydrofuran, dimethyl sulfoxide, N-methylpyrrolidone, xylene, and combinations thereof.
5. The material for forming the channel layer for the stretchable thin film transistor of claim 1 , wherein an amount of the elastomer in the material for forming the channel layer for the stretchable thin film transistor is from about 0.1 parts by weight to about 1 part by weight based on 100 parts by weight of the organic semiconductor material.
6. The material for forming the channel layer for the stretchable thin film transistor of claim 1 , wherein an amount of the solvent in the material for forming the channel layer for the stretchable thin film transistor is from about 98.00 parts by weight to about 98.75 parts by weight based on 100 parts by weight of the total weight of the organic semiconductor material and the elastomer.
7. The material for forming the channel layer for the stretchable thin film transistor of claim 1 , wherein a viscosity of the material for forming the channel layer for the stretchable thin film transistor is from about 1.08 cps to about 2.0 cps.
8. A channel layer for a stretchable thin film transistor, the channel layer comprising an elastomer matrix and an organic semiconductor material network, wherein the organic semiconductor material network is present at least on a surface of the elastomer matrix, wherein the organic semiconductor material is selected from the group consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(quaterthiophene) (PQT), poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 6,13-bis(triisopropylsilyethylnyl)pentacene (TIPS pentacene), and combinations thereof.
9. The channel layer for the stretchable thin film transistor of claim 8 , wherein the elastomer is selected from the group consisting of a polybutadiene (PB), a styrene-butadiene copolymer, a styrene-ethylene-butylene-styrene copolymer (SBS), a styrene-ethylene-butylene-styrene copolymer (SEBS), an ethylene propylene diene rubber (EPDM), an acrylic rubber, a polychloroprene rubber (CR), a polyurethane (PU), a butyl rubber, and combinations thereof.
10. The channel layer for the stretchable thin film transistor of claim 8 , wherein a weight average molecular weight of the elastomer is from about 65,470 g/mol to about 172,300 g/mol.
11. The channel layer for the stretchable thin film transistor of claim 8 , wherein an amount of the elastomer in the channel layer for the stretchable thin film transistor is from about 0.1 parts by weight to about 1 part by weight based on 100 parts by weight of the organic semiconductor material.
12. The channel layer for the stretchable thin film transistor of claim 8 , wherein a thickness of the channel layer is from about 0.02 μm to about 0.05 μm.
13. The channel layer for the stretchable thin film transistor of claim 8 , having a property in which almost no change in transfer characteristics occur from an elongation rate of from about 0% to about 80%.
14. The channel layer for the stretchable thin film transistor of claim 8 , having a property in which almost no change in transfer characteristics occur after elongating 150 times.
15. The channel layer for the stretchable thin film transistor of claim 8 , having a property in which almost no change in transfer characteristics occur after eight days after the manufacturing date.
16. A thin film transistor comprising an elastomer matrix and a channel layer comprising an elastomer matrix and an organic semiconductor material network present at least on a surface of the elastomer matrix wherein the organic semiconductor material is selected from the group consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(quaterthiophene) (PQT), poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 6,13-bis(triisopropylsilyethylnyl)pentacene (TIPS pentacene), and combinations thereof.