Apparatus and method for inspecting infrared solid-state image sensor

1. An apparatus for inspecting an infrared solid-state image sensor including at least one infrared detection pixel that generates an electrical signal in accordance with an incident infrared ray and an amount of supplied constant current,

the apparatus comprising:

a current control unit configured to control the amount of constant current and supply a first constant current and a second constant current to the infrared detection pixel, the first constant current and the second constant current being different from each other;

a constant current supply time control unit configured to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel;

an A-D converter configured to convert a first electrical signal and a second electrical signal from the infrared detection pixel into a first digital signal and a second digital signal, respectively, the first electrical signal being generated when the first constant current is supplied to the infrared detection pixel, the second electrical signal being generated when the second constant current is supplied to the infrared detection pixel;

a subtracting unit configured to calculate a difference between the first digital signal and the second digital signal; and

a determining unit configured to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit.

2. The apparatus according to claim 1 , wherein the determining unit includes a checking unit configured to check whether the absolute value of the difference calculated by the subtracting unit is smaller than a first threshold value or is larger than a second threshold value, and determines that the infrared detection pixel is a defective pixel when the absolute value of the difference is smaller than the first threshold value or is larger than the second threshold value, the second threshold value being larger than the first threshold value.

3. The apparatus according to claim 1 , wherein the constant current supply time control unit controls the periods of time, to supply the first and second constant currents to the infrared detection pixel for a first supply period and a second supply period, respectively, the second supply period being longer than the first supply period.

4. The apparatus according to claim 1 , wherein the infrared solid-state image sensor includes a load transistor that has a gate to receive a control signal from the current control unit, has one end connected to a low current source, has the other end connected to the infrared detection pixel, and changes the amount of constant current in accordance with the control signal applied to the gate.

5. The apparatus according to claim 1 , wherein

the infrared solid-state image sensor includes a row select circuit configured to select infrared detection pixels arranged in the same row, and a column select circuit configured to select infrared detection pixels arranged in the same column, and

the constant current supply time control unit determines time for the row select circuit to select a row.

6. The apparatus according to claim 1 , wherein the infrared detection pixel includes a cell, the cell including an infrared absorption film configured to absorb an incident infrared ray and convert the incident infrared ray into heat, and a thermoelectric converting unit configured to convert the heat generated by the infrared absorption film into an electrical signal.

7. The apparatus according to claim 6 , wherein the infrared detection pixel is formed on a semiconductor substrate having a cavity in a surface thereof, and further includes a supporting structure configured to support the cell above the cavity, the supporting structure including an interconnect for reading the electrical signal from the thermoelectric converting unit.

8. The apparatus according to claim 6 , wherein the thermoelectric converting unit is a pn junction diode formed on single-crystal silicon.

9. A method for inspecting an infrared solid-state image sensor including at least one infrared detection pixel that generates an electrical signal in accordance with an incident infrared ray and an amount of supplied constant current,

the method comprising:

supplying a first constant current and a second constant current to the infrared detection pixel, the first constant current and the second constant current being different from each other;

converting a first electrical signal and a second electrical signal from the infrared detection pixel into a first digital signal and a second digital signal, respectively, the first electrical signal being generated when the first constant current is supplied to the infrared detection pixel, the second electrical signal being generated when the second constant current is supplied to the infrared detection pixel;

calculating a difference between the first digital signal and the second digital signal; and

determining whether the infrared detection pixel is a defective pixel based on the absolute value of the calculated difference.

10. The method according to claim 9 , further comprising

controlling periods of time in which the first and second constant currents are supplied to the infrared detection pixel.