High density microelectronics packaging
Example packaging of microelectronics and example methods of manufacturing the same are provided herein. The packaging can enable and/or improve the use of the microelectronics in a downhole, high temperature and/or high pressure setting. The microelectronics packaging can include double-sided active components, heat sinks, and/or three-dimensional stacking of dies.
1. A high temperature multi-chip module packaging comprising:
a ceramic substrate having a first side and a second side;
a housing having at least one hole extending therethrough, wherein the at least one hole has a first diameter portion and a second diameter portion, wherein a shoulder is formed between the first diameter portion and the second diameter portion, and wherein a diameter of the first diameter portion is different than a diameter of the second diameter portion;
a plurality of metal posts that are brazed to the ceramic substrate and welded to the housing, wherein a base of a first of the metal posts is in physical contact with the shoulder;
a first active die positioned on the first side of the ceramic substrate;
a second active die stacked vertically on the first active die;
one or more bonding pads attached to the first side of the ceramic substrate;
a first bonding wire connected to the first active die and the one or more bonding pads; and
a second bonding wire connected to the second active die and the one or more bonding pads.
2. The high temperature multi-chip module packaging of claim 1 , wherein the ceramic substrate is brazed to the metal posts before the metal posts are welded to the housing.
3. The high temperature multi-chip module packaging of claim 1 , further comprising a heat sink attached to the housing.
4. The high temperature multi-chip module packaging of claim 3 , wherein the heat sink is brazed to the housing.
5. The high temperature multi-chip module packaging of claim 3 , further comprising at least one power consumption module disposed on the heat sink.
6. The high temperature multi-chip module packaging of claim 5 , wherein the at least one power consumption module is mounted directly on the heat sink.
7. The high temperature multi-chip module packaging of claim 5 , wherein the at least one power consumption module is mounted on a second substrate, the second substrate comprising at least one of beryllium oxide and aluminum nitride, the second substrate being mounted onto the heat sink.
8. The high temperature multi-chip module packaging of claim 1 , further comprising a spacer disposed between the first active die and the second active die.
9. The high temperature multi-chip module packaging of claim 1 , wherein the first active die and the second active die are connected with a back side connection.
10. The high temperature multi-chip module packaging of claim 1 , wherein the first active die and the second active die comprise a smaller sized die mounted on top of a larger sized die.
11. A method for manufacturing a high temperature multi-chip module packaging comprising:
providing a ceramic substrate having a first side and a second side, wherein a first active die is positioned on the first side of the ceramic substrate, a second active die is stacked vertically on the first active die, and a third active die is positioned on the second side of the ceramic substrate;
connecting a first bonding wire to the first active die and to one or more bonding pads positioned on the first side of the substrate;
connecting a second bonding wire to the second active die and to the one or more bonding pads;
attaching the ceramic substrate to a plurality of metal posts by brazing; and
attaching the metal posts to a housing by welding, wherein the housing has at least one hole extending therethrough, wherein the at least one hole has a first diameter portion and a second diameter portion, wherein a shoulder is formed between the first diameter portion and the second diameter portion, wherein a diameter of the first diameter portion is different than a diameter of the second diameter portion, and wherein a base of a first of the metal posts is in physical contact with the shoulder.
12. The method of claim 11 , wherein the metal posts are brazed to the ceramic substrate before the metal posts are welded to the housing.
13. The method of claim 12 , further comprising attaching a heat sink to the housing.
14. The method of claim 13 , further comprising vertically stacking the first active die and the second active die on the substrate.
15. The method of claim 14 , further comprising testing the first active die and the second active die on a layer-by-layer basis.
16. A high temperature multi-chip module packaging comprising:
a ceramic substrate having a first side and a second side;
a housing having at least one hole extending therethrough, wherein the at least one hole has a first diameter portion and a second diameter portion, wherein a shoulder is formed between the first diameter portion and the second diameter portion, and wherein a diameter of the first diameter portion is different than a diameter of the second diameter portion;
a plurality of metal posts that are brazed to the ceramic substrate and subsequently welded to the housing, wherein a base of a first of the metal posts is in physical contact with the shoulder;
a heat sink attached to the housing;
a power consumption module disposed on the heat sink;
a first active die positioned on the first side of the ceramic substrate;
a second active die stacked vertically on the first active die;
a third active die positioned on the second side of the ceramic substrate;
one or more bonding pads attached to the first side of the ceramic substrate;
a first bonding wire connected to and extending between the first active die and the one or more bonding pads; and
a second bonding wire connected to and extending between the second active die and the one or more bonding pads.
17. The high temperature multi-chip module packaging of claim 1 , wherein the first active die and the second active die are substantially rectangular, wherein the second active die is rotated 90 degrees with respect to the first active die, and wherein a non-conductive epoxy is positioned between the first active die and the second active die.
18. The high temperature multi-chip module packaging of claim 1 , further comprising a spacer positioned between the first active die and the second active die, wherein a bottom side of the spacer is attached to a top side of the first active die with a non-conductive epoxy, and a top side of the spacer is attached to a bottom side of the second active die with a conductive epoxy.
19. The high temperature multi-chip module packaging of claim 1 , wherein the at least one hole is provided as a plurality of holes, wherein each of the metal posts is at least partially positioned within a respective one of the holes in the housing, and wherein a gap exists between the ceramic substrate and the housing.
20. The high temperature multi-chip module packaging of claim 1 , wherein the housing is not exposed to brazing.
21. The high temperature multi-chip module packaging of claim 1 , wherein the base of the first of the posts is positioned within the first diameter portion, and wherein the diameter of the first diameter portion is greater than the diameter of the second diameter portion.
22. The high temperature multi-chip module packaging of claim 21 , wherein the base of the first of the posts is exposed through the second diameter portion.