IP Library Granted Patent US 9,437,787
Granted Patent B2
US 9,437,787 · App. 14/361,216 · Granted Sep 6, 2016

Semiconductor light emitting device

Inventor: Takeshi Kamikawa (Osaka, JP)
Assignee: SHARP KABUSHIKI KAISHA
H01L33/502H01L24/29H01L33/56H01L33/483H01L33/507H01L33/60H01L33/641H01L2224/45144H01L2224/48091H01L2224/48465H01L2224/49107H01L2224/73265H01L2924/12041H01L2924/12042H01L2924/15747H01L2924/15787H01L2924/181
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Quick Facts
Patent No.
US 9,437,787
App. No.
14/361,216
Granted
Sep 6, 2016
Kind
B2
Abstract

A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member.

Claims (20)

1. A semiconductor light emitting device, comprising:

a semiconductor light emitting element including a transparent substrate;

a substrate on which said semiconductor light emitting element is mounted;

an adhesive layer containing a fluorescent substance, for fixing said semiconductor light emitting element on said substrate; and

a sealing member containing a fluorescent substance, for sealing said semiconductor light emitting element; wherein

the fluorescent substance contained in the adhesive layer has an average particle diameter smaller than an average particle diameter of the fluorescent substance contained in the sealing member; and

said adhesive layer has a thickness equal to or smaller than an average particle diameter of said fluorescent substance contained in said sealing member.

2. The semiconductor light emitting device according to claim 1 , wherein

average particle diameter of the fluorescent substance contained in said adhesive layer is at most 200 nm.

3. The semiconductor light emitting device according to claim 2 , wherein

average particle diameter of the fluorescent substance contained in said adhesive layer is at most 100 nm.

4. The semiconductor light emitting device according to claim 1 , wherein

said substrate has a light reflecting surface; and

said semiconductor light emitting element is mounted on said light reflecting surface.

5. The semiconductor light emitting device according to claim 1 , wherein

the fluorescent substance contained in said adhesive layer emits fluorescent light having longer emission wavelength than the fluorescent substance contained in said sealing member.

6. The semiconductor light emitting device according to claim 1 , wherein

said transparent substrate is any of a sapphire substrate, a nitride-based semiconductor substrate and an SiC substrate.

7. The semiconductor light emitting device according to claim 1 wherein

said adhesive layer is formed of silicone resin.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2014
From: KAMIKAWA, TAKESHI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 032990/0765 →
Priority Claims (1)
JP 2012-136538 · Jun 18, 2012 · national
Continuity (1)
Related Publication 20140353704A1 · Dec 4, 2014