IP Library Granted Patent US 9,444,067
Granted Patent B2
US 9,444,067 · App. 14/600,248 · Granted Sep 13, 2016

Organic light-emitting diode fluorescent device and method for producing same

Inventors: Yanhu Li (Shanghai, CN); Hsin Chih Lin (Shanghai, CN)
Assignee: EverDisplay Optronics (Shanghai) Ltd.
H01L51/5056H01L51/5012H01L51/5072H01L51/5088H01L51/5092H01L51/56H01L51/0061H01L51/0072H01L51/0073
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Quick Facts
Patent No.
US 9,444,067
App. No.
14/600,248
Granted
Sep 13, 2016
Kind
B2
Abstract

An organic light-emitting diode fluorescent device includes an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. A method for producing the organic light-emitting diode fluorescent device includes providing an anode substrate as an anode layer and disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer while producing the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer.

Claims (24)

1. In an organic light-emitting diode fluorescent device comprising an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer, wherein the improvement comprises:

a first confinement layer disposed between the cathode layer and the emissive layer and having a triplet energy level higher than a triplet energy level of the emissive layer,

wherein the first confinement layer is disposed on an upper face of the emissive layer, and wherein the first confinement layer is capable of transporting electrons and serves as an electron transport layer.

2. The device as claimed in claim 1 , wherein the first confinement layer is disposed on an upper face of the emissive layer, and wherein an electron transport layer is disposed between the first confinement layer and the electron injection layer.

3. The device as claimed in claim 2 further comprising a second confinement layer disposed on the lower face of the emissive layer; and a hole transport layer disposed between the second confinement layer and the hole injection layer.

4. The device as claimed in claim 1 , wherein the hole injection layer has a hole injection capability larger than a hole injection capability of the electron injection layer.

5. The device as claimed in claim 1 , further comprising a second confinement layer disposed on the lower face of the emissive layer, and wherein the second confinement layer is capable of transporting holes and serves as a hole transport layer.

6. The device as claimed in claim 1 , further comprising a second confinement layer disposed on the lower face of the emissive layer, and wherein a hole transport layer is disposed between the second confinement layer and the hole injection layer.

7. The device as claimed in claim 1 , further comprising a second confinement layer disposed on the lower face of the emissive layer, and wherein the hole injection layer has a hole injection capability smaller than an electron injection capability of the electron injection layer.

8. The device as claimed in claim 1 , wherein a material for the confinement layer is 4,4′,4″-Tris(carbazol-9-yl) triphenylamine or 2,8-Bis-(diphenylphosphinoyl) dibenzofuran.

9. The device as claimed in claim 1 further comprising a second confinement layer disposed on the lower face of the emissive layer, with the second confinement layer capable of transporting holes and serving as a hole transport layer.

10. A method for producing an organic light-emitting diode fluorescent device, the method comprising the steps of:

providing an anode substrate as an anode layer;

disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence;

disposing a first confinement layer between the emissive layer and the cathode layer while producing the emissive layer, wherein the confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer;

wherein the first confinement layer disposing step includes disposing the first confinement layer on the upper face of the emissive layer, wherein the first confinement layer is located between the electron injection layer and the emissive layer, and wherein the first confinement layer is capable of transporting electrons and serves as an electron transport layer.

11. The method as claimed in claim 10 , wherein the first confinement layer disposing step includes disposing the first confinement layer on the upper face of the emissive layer and disposing an electron transport layer between the first confinement layer and the electron injection layer.

12. The method as claimed in claim 10 , wherein the hole injection layer has a hole injection capability larger than a hole injection capability of the electron injection layer.

13. The method as claimed in claim 10 , further comprising the step of disposing a second confinement layer on the lower face of the emissive layer, wherein the second confinement layer is located between the hole injection layer and the emissive layer, and wherein the second confinement layer is capable of transporting holes and serves as a hole transport layer.

14. The method as claimed in claim 13 , comprising disposing a hole transport layer between the second confinement layer and the hole injection layer.

15. The method as claimed in claim 10 , further comprising the step of disposing a second confinement layer on the lower face of the emissive layer and disposing a hole transport layer between the second confinement layer and the hole injection layer.

16. The method as claimed in claim 15 , wherein the second confinement layer is located between the hole injection layer and the emissive layer, and wherein the second confinement layer is capable of transporting holes and serves as a hole transport layer.

17. The method as claimed in claim 10 , wherein the hole injection layer has a hole injection capability smaller than a hole injection capability of the electron injection layer.

18. The method as claimed in claim 10 , wherein a material for the confinement layer is 4,4′,4″-Tris(carbazol-9-yl) triphenylamine or 2,8-Bis-(diphenylphosphinoyl) dibenzofuran.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADDRESS OF THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 053259 FRAME 0773. ASSIGNOR(S) HEREBY CONFIRMS THE REMAINDER OF THE ASSIGNMENT IN ITS ENTIRETY. Recorded Jul 22, 2020
From: EVERDISPLAY OPTRONICS (SHANGHAI) LIMITED
To: EVERDISPLAY OPTRONICS (SHANGHAI) CO., LTD.
Reel/Frame 053284/0303 →
CHANGE OF NAME Recorded Jul 17, 2020
From: EVERDISPLAY OPTRONICS (SHANGHAI) LIMITED
To: EVERDISPLAY OPTRONICS (SHANGHAI) CO., LTD.
Reel/Frame 053259/0773 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2015
From: LI, YANHU; LIN, HSIN CHIH
To: EVERDISPLAY OPTRONICS (SHANGHAI) LTD.
Reel/Frame 034755/0422 →
Priority Claims (1)
CN 2014 1 0621109 · Nov 6, 2014 · national
Continuity (1)
Related Publication 20160133866A1 · May 12, 2016